公开(公告)号：US07880377B2

公开(公告)日：2011-02-01

申请号：US10587029

申请日：2005-01-20

申请人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

发明人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

IPC分类号： H05B33/14 ,  B32B5/16

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

摘要翻译： 获得具有实际发光特性的发光器件，而不需外延生长。 本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。 无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光 空穴注入电极，与其外延关系。

公开(公告)号：US20080122341A1

公开(公告)日：2008-05-29

申请号：US10587029

申请日：2005-01-20

申请人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

发明人： Masahiro Orita ,  Hiroshi Kawazoe ,  Satoshi Kobayashi ,  Hiroaki Yanagita ,  Morihiro Niimi ,  Yuki Tani ,  Misaki Hatsuda

IPC分类号： H01J1/63

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

摘要翻译： 获得具有实际发光特性的发光器件，而不需外延生长。 本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。 无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光 空穴注入电极，与其外延关系。