摘要:
A problem of the invention is to prevent a substrate from being damaged with a metal stylus upon mechanical patterning.In the invention, a thin film obtained by accumulating in this order a substrate 2, a back surface electrode layer 3, a multi-element compound semiconductor thin film (light absorbing layer) 5, a transparent buffer layer 6 having a high resistance and a transparent and electroconductive window layer 7 is divided into respective unit cells, which are connected plurally in series to obtain a prescribed voltage, and it contains patterning P1 of dividing the back surface electrode layer 3, patterning P2 of dividing the light absorbing layer 5, or the light absorbing layer and the buffer layer 6, and patterning P3 of dividing from the window layer 7 up to the light absorbing layer 5, in which in P2 and P3, an ultrathin film layer 4 formed secondarily through reaction with a chalcogen element on the surface of the back surface electrode layer 3 in the formation step of the light absorbing layer is used as a solid lubricant upon mechanically removing the constitutional thin film layers with a metal stylus to form grooves.
摘要:
A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.
摘要:
A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.
摘要:
A problem of the invention is to prevent a substrate from being damaged with a metal stylus upon mechanical patterning. In the invention, a thin film obtained by accumulating in this order a substrate 2, a back surface electrode layer 3, a multi-element compound semiconductor thin film (light absorbing layer) 5, a transparent buffer layer 6 having a high resistance and a transparent and electroconductive window layer 7 is divided into respective unit cells, which are connected plurally in series to obtain a prescribed voltage, and it contains patterning P1 of dividing the back surface electrode layer 3, patterning P2 of dividing the light absorbing layer 5, or the light absorbing layer and the buffer layer 6, and patterning P3 of dividing from the window layer 7 up to the light absorbing layer 5, in which in P2 and P3, an ultrathin film layer 4 formed secondarily through reaction with a chalcogen element on the surface of the back surface electrode layer 3 in the formation step of the light absorbing layer is used as a solid lubricant upon mechanically removing the constitutional thin film layers with a metal stylus to form grooves.
摘要:
A solar cell with a heightened open-circuit voltage and improved junction quality of the interface between an interfacial layer (or buffer layer) and a thin-film light absorbing layer is disclosed. A thin-film solar cell is fabricated on a glass substrate and includes a metallic back electrode, a light absorbing layer, an interfacial layer, a window layer, and an upper electrode. The solar cell is characterized by the light absorbing layer. The light absorbing layer is a thin film of p-type Cu(InGa)Se.sub.2 (CIGS) of the Cu-III-VI.sub.2 chalcopyrite structure and has such a gallium concentration gradient that the gallium concentration gradually (gradationally) increases from the surface thereof to the inside, thereby attaining a heightened open-circuit voltage. The light absorbing layer has on its surface an ultrathin-film surface layer of Cu(InGa)(SeS).sub.2 (CIGSS), which has such a sulfur concentration gradient that the sulfur concentration abruptly decreases from the surface thereof (i.e., from the interfacial layer side) to the inside, thereby improving interfacial junction characteristics.