公开(公告)号：US20070163646A1

公开(公告)日：2007-07-19

申请号：US10584286

申请日：2004-12-22

申请人： Katsumi Kushiya ,  Muneyori Tachiyuki

发明人： Katsumi Kushiya ,  Muneyori Tachiyuki

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A problem of the invention is to prevent a substrate from being damaged with a metal stylus upon mechanical patterning. In the invention, a thin film obtained by accumulating in this order a substrate 2, a back surface electrode layer 3, a multi-element compound semiconductor thin film (light absorbing layer) 5, a transparent buffer layer 6 having a high resistance and a transparent and electroconductive window layer 7 is divided into respective unit cells, which are connected plurally in series to obtain a prescribed voltage, and it contains patterning P1 of dividing the back surface electrode layer 3, patterning P2 of dividing the light absorbing layer 5, or the light absorbing layer and the buffer layer 6, and patterning P3 of dividing from the window layer 7 up to the light absorbing layer 5, in which in P2 and P3, an ultrathin film layer 4 formed secondarily through reaction with a chalcogen element on the surface of the back surface electrode layer 3 in the formation step of the light absorbing layer is used as a solid lubricant upon mechanically removing the constitutional thin film layers with a metal stylus to form grooves.

摘要翻译： 本发明的一个问题是防止在机械图案化时用金属触笔损坏基板。 在本发明中，通过依次堆积基板2，背面电极层3，多元素化合物半导体薄膜（光吸收层）5，具有高电阻的透明缓冲层6和 透明导电窗层7被分成多个串联连接以获得规定电压的各个单电池，并且包含划分背面电极层3的图案化P 1，将光吸收层5分割成图案化P 2 ，或者光吸收层和缓冲层6，以及将从窗口层7分割到光吸收层5的图案化P 3，其中在P 2和P 3中，通过与第二次反应形成的超薄膜层4 在光吸收层的形成步骤中，背面电极层3的表面上的硫属元素作为固体润滑剂用于机械地除去构成薄膜 具有金属触笔的层以形成凹槽。

公开(公告)号：US5981868A

公开(公告)日：1999-11-09

申请号：US841690

申请日：1997-04-30

申请人： Katsumi Kushiya ,  Muneyori Tachiyuki ,  Takahisa Kase

发明人： Katsumi Kushiya ,  Muneyori Tachiyuki ,  Takahisa Kase

IPC分类号： C23C14/06 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/04

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

摘要： A solar cell with a heightened open-circuit voltage and improved junction quality of the interface between an interfacial layer (or buffer layer) and a thin-film light absorbing layer is disclosed. A thin-film solar cell is fabricated on a glass substrate and includes a metallic back electrode, a light absorbing layer, an interfacial layer, a window layer, and an upper electrode. The solar cell is characterized by the light absorbing layer. The light absorbing layer is a thin film of p-type Cu(InGa)Se.sub.2 (CIGS) of the Cu-III-VI.sub.2 chalcopyrite structure and has such a gallium concentration gradient that the gallium concentration gradually (gradationally) increases from the surface thereof to the inside, thereby attaining a heightened open-circuit voltage. The light absorbing layer has on its surface an ultrathin-film surface layer of Cu(InGa)(SeS).sub.2 (CIGSS), which has such a sulfur concentration gradient that the sulfur concentration abruptly decreases from the surface thereof (i.e., from the interfacial layer side) to the inside, thereby improving interfacial junction characteristics.

摘要翻译： 公开了具有提高的开路电压和改善界面层（或缓冲层）和薄膜光吸收层之间界面的结合质量的太阳能电池。 在玻璃基板上制造薄膜太阳能电池，包括金属背电极，光吸收层，界面层，窗口层和上电极。 太阳能电池的特征在于光吸收层。 光吸收层是Cu-III-VI2黄铜矿结构的p型Cu（InGa）Se2（CIGS）的薄膜，具有镓浓度逐渐（渐变）从其表面增加到镓浓度梯度 从而达到提高的开路电压。 光吸收层在其表面上具有Cu（InGa）（SeS）2（CIGSS）的超薄膜表面层，其具有这样的硫浓度梯度，使得硫浓度从其表面突然降低（即，从界面 层侧）到内部，从而改善界面接合特性。

公开(公告)号：US08242795B2

公开(公告)日：2012-08-14

申请号：US12298721

申请日：2007-03-29

申请人： Katsumi Kushiya ,  Satoru Kuriyagawa

发明人： Katsumi Kushiya ,  Satoru Kuriyagawa

IPC分类号： G01R31/26

CPC分类号： H01L31/18 ,  H02S50/10 ,  H02S99/00 ,  Y02E10/541

摘要： The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%). Thus, the property of the module 2′ that the module 2′ does not show considerable deterioration even after storage in an open state for 1,000 hours can be correctly evaluated.

摘要翻译： 正确地评估了在用弱光照射时模块恢复其转换效率等的CIS基薄膜太阳能电池模块的性能。 以恒定光太阳能模拟器（太阳模拟器）1D对CIS基薄膜太阳能电池模块进行常规的湿热测试，使得光源1E的功率被调节，使得太阳模拟器1D发射 对应于多云天气中的太阳辐射量的弱光，即导致100-300W / m 2的辐照度，并且在相同温度，湿度和相同温度下在整个测试期间模块连续照射弱光 储存期间与常规的试验条件（在85℃的温度下，黑暗中储存1000小时，相对湿度为85％）相同。 因此，即使在打开状态下存储1000小时后，模块2'的性能也不会显着降低，所以可以正确地评估模块2'的性能。

公开(公告)号：US20100311202A1

公开(公告)日：2010-12-09

申请号：US12745116

申请日：2008-11-28

申请人： Hideki Hakuma ,  Yuri Yamaguchi ,  Katsuya Tabuchi ,  Katsumi Kushiya

发明人： Hideki Hakuma ,  Yuri Yamaguchi ,  Katsuya Tabuchi ,  Katsumi Kushiya

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time Δt1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time Δt2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time Δt3.

摘要翻译： 将包含Cu / Ga，Cu / In和Cu-Ga / In中的任一种的处理对象在导入硒源的状态下在T1的温度下保持一段时间＆lt; Dgr; t1，从而形成 硒化物 此后，引入硫源以用硫气氛代替系统中的气氛。 在这种状态下，处理对象在温度T2下保持在加热状态一段时间＆lt; Dgr; t2。 然后将处理对象的温度降低至T3，并且在该温度下，将处理对象保持在加热状态一段时间＆lt; Dgr; t3。

公开(公告)号：US20090283131A1

公开(公告)日：2009-11-19

申请号：US12508961

申请日：2009-07-24

申请人： Katsumi KUSHIYA ,  Muneyori TACHIYUKI

发明人： Katsumi KUSHIYA ,  Muneyori TACHIYUKI

IPC分类号： H01L31/042

CPC分类号： H01L31/022425 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A problem of the invention is to prevent a substrate from being damaged with a metal stylus upon mechanical patterning.In the invention, a thin film obtained by accumulating in this order a substrate 2, a back surface electrode layer 3, a multi-element compound semiconductor thin film (light absorbing layer) 5, a transparent buffer layer 6 having a high resistance and a transparent and electroconductive window layer 7 is divided into respective unit cells, which are connected plurally in series to obtain a prescribed voltage, and it contains patterning P1 of dividing the back surface electrode layer 3, patterning P2 of dividing the light absorbing layer 5, or the light absorbing layer and the buffer layer 6, and patterning P3 of dividing from the window layer 7 up to the light absorbing layer 5, in which in P2 and P3, an ultrathin film layer 4 formed secondarily through reaction with a chalcogen element on the surface of the back surface electrode layer 3 in the formation step of the light absorbing layer is used as a solid lubricant upon mechanically removing the constitutional thin film layers with a metal stylus to form grooves.

摘要翻译： 本发明的一个问题是防止在机械图案化时用金属触笔损坏基板。 在本发明中，通过依次堆积基板2，背面电极层3，多元素化合物半导体薄膜（光吸收层）5，具有高电阻的透明缓冲层6和 透明导电窗口层7被分成多个串联连接以获得规定电压的单元电池，并且包含划分背面电极层3的图案化图案化P1，划分光吸收层5的图案化P2，或 光吸收层和缓冲层6，以及将从窗口层7分割到光吸收层5的图案化P3，其中在P2和P3中，通过与硫化物层上的硫属元素反应而二次形成的超薄膜层4 在光吸收层的形成步骤中的背面电极层3的表面作为固体润滑剂用于机械地除去构成薄膜层时 金属触针形成凹槽。

公开(公告)号：US20080271781A1

公开(公告)日：2008-11-06

申请号：US11721381

申请日：2005-12-09

申请人： Katsumi Kushiya ,  Yoshiaki Tanaka ,  Masaru Onodera ,  Manabu Tanaka ,  Yoshinori Nagoya

发明人： Katsumi Kushiya ,  Yoshiaki Tanaka ,  Masaru Onodera ,  Manabu Tanaka ,  Yoshinori Nagoya

IPC分类号： H01L31/00

CPC分类号： H01L31/0322 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： This invention provides a CIS-based thin film solar battery and a process for producing the same in which the formation of an alkali barrier layer and a metal backside electrode layer is carried out at a low cost in a short time to prevent such an unfavorable phenomenon that a light absorbing layer is separated from the interface of the light absorbing layer and the metal backside electrode layer. The CIS-based thin film solar battery (1) comprises a glass substrate (2), an alkali-free layer (7) such as silica, a metal backside electrode layer (3) having a laminate structure, a p-type CIS-based light absorbing layer (4), a high-resistance buffer layer (5), and an n-type window layer (6) stacked in that order. The layer (7), either alone or together with a first layer (3a) in the layer (3), can function as an alkali barrier layer (8) that can prevent and control the thermal diffusion of an alkali component into the light absorbing layer during the formation of the layer (4) from the substrate (2). In the layer (3a), crystal grains are fine and has high density. After the formation of the layer (7) on the substrate by RF or DC sputtering, the layer (3) is continuously formed on the layer (7) by DC sputtering.

摘要翻译： 本发明提供了一种基于CIS的薄膜太阳能电池及其制造方法，其中在短时间内以低成本进行碱阻挡层和金属背面电极层的形成以防止这种不利现象 光吸收层与金属背面电极层的界面分离。 基于CIS的薄膜太阳能电池（1）包括玻璃基板（2），无碱层（7）如二氧化硅，具有层压结构的金属背面电极层（3），p型CIS- 基于光的吸收层（4），高电阻缓冲层（5）和n型窗口层（6）。 单独或与层（3）中的第一层（3a）一起的层（7）可以用作可以防止和控制碱成分进入光的热扩散的碱阻挡层（8） 在从衬底（2）形成层（4）期间形成吸收层。 在层（3a）中，晶粒细，密度高。 在通过RF或DC溅射在衬底上形成层（7）之后，通过DC溅射在层（7）上连续形成层（3）。

公开(公告)号：US08093096B2

公开(公告)日：2012-01-10

申请号：US11915423

申请日：2006-05-24

申请人： Katsumi Kushiya

发明人： Katsumi Kushiya

IPC分类号： H01L33/00

CPC分类号： H01L31/0322 ,  C23C16/306 ,  C23C16/54 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film deposition method and apparatus. Thus, the cost of raw materials and the cost of waste treatments are reduced to attain a considerable reduction in production cost.After a metallic base electrode layer 1B and a light absorption layer 1C are formed in this order on a glass substrate 1A, a high-resistance buffer layer 1D and a window layer 1E are successively formed in this order in a multi layer arrangement on the light absorption layer 1C of the resultant semifinished solar cell substrate by the MOCVD method. Consequently, a film deposition method and apparatus are simplified and the cost of raw materials and the cost of waste treatments can be reduced.

摘要翻译： 通过MOCVD法连续形成高电阻缓冲层和窗口层（透明导电膜），以通过溶液沉积法获得与常规膜沉积相同的输出特性，并简化膜沉积方法和装置。 因此，原料成本和废物处理成本降低，从而大大降低了生产成本。 在玻璃基板1A上依次形成金属基极电极层1B和光吸收层1C之后，依次形成高电阻缓冲层1D和窗口层1E 通过MOCVD法得到的半成品太阳能电池基板的吸收层1C。 因此，简化了膜沉积方法和装置，可以降低原料的成本和废物处理的成本。

公开(公告)号：US20110011451A1

公开(公告)日：2011-01-20

申请号：US12921222

申请日：2008-03-07

申请人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Tetsuya Aramoto ,  Katsumi Kushiya

发明人： Hideki Hakuma ,  Yoshiaki Tanaka ,  Tetsuya Aramoto ,  Katsumi Kushiya

IPC分类号： H01L31/0264

CPC分类号： H01L31/03923 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541

摘要： In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

摘要翻译： 在通过依次堆叠光吸收层，高电阻缓冲层和窗口层而获得的CIS基薄膜太阳能电池的集成结构中，与光吸收层相邻的第一缓冲层由含有 镉（Cd），锌（Zn）或铟（In），与第一缓冲层相邻的第二缓冲层由氧化锌基薄膜制成，形成第三缓冲层以覆盖通过成形暴露的端面 光吸收层，第一缓冲层，第二缓冲层和第二缓冲层的顶端面的布线图案，第三缓冲层由氧化锌系薄膜构成。

公开(公告)号：US20090159112A1

公开(公告)日：2009-06-25

申请号：US12092094

申请日：2006-10-31

申请人： Katsumi Kushiya ,  Norimasa Akema ,  Manabu Tanaka

发明人： Katsumi Kushiya ,  Norimasa Akema ,  Manabu Tanaka

IPC分类号： H01L31/042 ,  B29C65/00

CPC分类号： H01L31/0749 ,  H01L31/048 ,  H02S40/38 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic module having long-term durability is obtained at low cost.A CIS based thin-film photovoltaic module 1 is obtained by bonding a cover glass 4 comprising, e.g., a semi-tempered white flat glass, which is inexpensive and durable, to a CIS based thin-film photovoltaic circuit 2 on a glass substrate 2A with a thermally crosslinked ethylene vinyl acetate (hereinafter referred to as EVA) resin film 3 (or sheet) as an adhesive. Use of the EVA resin film 3 reduces the amount of an EVA resin to be used. In the crosslinking, a gas generating from the EVA resin film is removed by vacuum suction to prevent bubble generation or inclusion, etc. A high-capacity storage capacitor 9 is disposed on that side of the glass substrate which is opposite to the circuit side to store the electricity optically generated by the circuit.

摘要翻译： 以低成本获得具有长期耐用性的光伏组件。 通过将廉价且耐用的包括例如半平板白色平板玻璃的玻璃玻璃4结合到玻璃基板2A上的CIS基薄膜光伏电路2，获得CIS基薄膜光伏组件1 使用热交联的乙烯乙酸乙烯酯（以下称为EVA）树脂膜3（或片）作为粘合剂。 EVA树脂膜3的使用减少了所使用的EVA树脂的量。 在交联中，通过真空抽吸除去从EVA树脂膜产生的气体，以防止发生气泡或夹杂物等。在玻璃基板的与电路侧相对的一侧设置大容量存储电容器9， 存储由电路光学产生的电。

公开(公告)号：US06048442A

公开(公告)日：2000-04-11

申请号：US841688

申请日：1997-04-30

申请人： Katsumi Kushiya ,  Muneyori Tachiyuki ,  Takahisa Kase

发明人： Katsumi Kushiya ,  Muneyori Tachiyuki ,  Takahisa Kase

IPC分类号： H01L31/04 ,  C23C14/34 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/18

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lime float glass. A light absorbing layer is formed by forming a back electrode on a soda-lime float glass substrate, forming on the back electrode layer a stacked precursor film including a copper-gallium alloy layer and an indium layer by sputtering, and then heating the precursor film in an atmosphere of selenium and/or sulfur.

摘要翻译： 通过简单的方法在低于钠钙浮渣的软化点的温度下形成被调节为具有任何期望的镓浓度并且能够获得高开路电压的薄膜光吸收层 玻璃。 通过在钠钙浮法玻璃基板上形成背面电极形成光吸收层，通过溅射在背面电极层上形成包含铜 - 镓合金层和铟层的叠层前体膜，然后加热前体膜 在硒和/或硫的气氛中。