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公开(公告)号:US09893173B2
公开(公告)日:2018-02-13
申请号:US15520815
申请日:2014-10-31
发明人: Shengdong Zhang , Yang Shao , Xiang Xiao , Xin He
IPC分类号: H01L21/00 , H01L29/66 , H01L21/02 , H01L29/786
CPC分类号: H01L29/66969 , H01L21/0217 , H01L21/02266 , H01L21/02274 , H01L21/02565 , H01L21/02614 , H01L21/28 , H01L29/786 , H01L29/7869
摘要: A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.
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公开(公告)号:US09991135B2
公开(公告)日:2018-06-05
申请号:US15521246
申请日:2014-10-31
发明人: Shengdong Zhang , Yang Shao , Xiang Xiao , Xin He
IPC分类号: H01L21/473 , H01L29/786 , H01L29/66 , H01L21/02 , H01L21/475 , H01L21/443
CPC分类号: H01L21/473 , H01L21/02244 , H01L21/02258 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/28 , H01L21/443 , H01L21/475 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要: A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.
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公开(公告)号:US20170316953A1
公开(公告)日:2017-11-02
申请号:US15521246
申请日:2014-10-31
发明人: Shengdong ZHANG , Yang SHAO , Xiang XIAO , Xin HE
IPC分类号: H01L21/473 , H01L29/786 , H01L29/66 , H01L21/475 , H01L21/02 , H01L21/443
CPC分类号: H01L21/473 , H01L21/02244 , H01L21/02258 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/28 , H01L21/443 , H01L21/475 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要: A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.
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公开(公告)号:US20170317195A1
公开(公告)日:2017-11-02
申请号:US15520815
申请日:2014-10-31
发明人: Shengdong ZHANG , Yang SHAO , Xiang XIAO , Xin HE
IPC分类号: H01L29/66 , H01L21/02 , H01L29/786
CPC分类号: H01L29/66969 , H01L21/0217 , H01L21/02266 , H01L21/02274 , H01L21/02565 , H01L21/02614 , H01L21/28 , H01L29/786 , H01L29/7869
摘要: A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.
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