公开(公告)号：US20160307837A1

公开(公告)日：2016-10-20

申请号：US14995830

申请日：2016-01-14

申请人： SUEHYE PARK ,  YOONHAE KIM ,  DEOKHAN BAE ,  JAERAN JANG ,  HWICHAN JUN

发明人： SUEHYE PARK ,  YOONHAE KIM ,  DEOKHAN BAE ,  JAERAN JANG ,  HWICHAN JUN

IPC分类号： H01L23/528 ,  H01L27/088

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.

摘要翻译： 一种半导体器件包括：具有有源图案的衬底;跨过有源图案延伸的栅电极;分别设置在栅电极之间的有源图案的上部的源极/漏极区;以及设置在栅电极和第二触点之间的第一触点和第二触点; 电连接到源/漏区。 第一和第二触点设置成使得其接触中心线与对应的栅极中心线间隔第一和第二距离。 第一距离与第二距离不同。

公开(公告)号：US09754936B2

公开(公告)日：2017-09-05

申请号：US14995830

申请日：2016-01-14

申请人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

发明人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

IPC分类号： H01L27/088 ,  H01L23/485

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.