公开(公告)号：US09754936B2

公开(公告)日：2017-09-05

申请号：US14995830

申请日：2016-01-14

申请人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

发明人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

IPC分类号： H01L27/088 ,  H01L23/485

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.