公开(公告)号：US20160307837A1

公开(公告)日：2016-10-20

申请号：US14995830

申请日：2016-01-14

申请人： SUEHYE PARK ,  YOONHAE KIM ,  DEOKHAN BAE ,  JAERAN JANG ,  HWICHAN JUN

发明人： SUEHYE PARK ,  YOONHAE KIM ,  DEOKHAN BAE ,  JAERAN JANG ,  HWICHAN JUN

IPC分类号： H01L23/528 ,  H01L27/088

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.

摘要翻译： 一种半导体器件包括：具有有源图案的衬底;跨过有源图案延伸的栅电极;分别设置在栅电极之间的有源图案的上部的源极/漏极区;以及设置在栅电极和第二触点之间的第一触点和第二触点; 电连接到源/漏区。 第一和第二触点设置成使得其接触中心线与对应的栅极中心线间隔第一和第二距离。 第一距离与第二距离不同。

公开(公告)号：US09754936B2

公开(公告)日：2017-09-05

申请号：US14995830

申请日：2016-01-14

申请人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

发明人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

IPC分类号： H01L27/088 ,  H01L23/485

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.

公开(公告)号：US20160126326A1

公开(公告)日：2016-05-05

申请号：US14715643

申请日：2015-05-19

申请人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

发明人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

IPC分类号： H01L29/417 ,  H01L29/45 ,  H01L23/522 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/41775 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.

摘要翻译： 半导体器件可以包括设置在有源区上的栅极图案和接触图案。 接触图案可以包括靠近栅极图案的凹陷部分和远离栅极图案的上升部分。 栅极图案可以包括栅极绝缘层和设置在栅极绝缘层上的栅电极。 凹部的上表面可以比上升部的上表面低。

公开(公告)号：US09536968B2

公开(公告)日：2017-01-03

申请号：US14715643

申请日：2015-05-19

申请人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

发明人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

IPC分类号： H01L29/417 ,  H01L29/45 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/41775 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.

摘要翻译： 半导体器件可以包括设置在有源区上的栅极图案和接触图案。 接触图案可以包括靠近栅极图案的凹陷部分和远离栅极图案的上升部分。 栅极图案可以包括栅极绝缘层和设置在栅极绝缘层上的栅电极。 凹部的上表面可以比上升部的上表面低。

公开(公告)号：US20160308016A1

公开(公告)日：2016-10-20

申请号：US15059519

申请日：2016-03-03

申请人： Hyoseok CHOI ,  Hwichan JUN ,  Yoonhae KIM ,  Chulsung KIM ,  Heungsik PARK ,  Doo-Young LEE

发明人： Hyoseok CHOI ,  Hwichan JUN ,  Yoonhae KIM ,  Chulsung KIM ,  Heungsik PARK ,  Doo-Young LEE

IPC分类号： H01L29/45 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785

摘要： Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

摘要翻译： 提供了一种半导体器件，其包括具有有源图案的衬底，与有源图案交叉的栅电极，在栅电极侧的有源图案的上部中的源极/漏极区域，源极/漏极区域包括凹部 区域，其电连接到源极/漏极区域，触点包括设置在凹部区域中的下部，以及金属硅化物层，设置在凹部区域的下部区域和源极/漏极之间 地区和联系人。