公开(公告)号：US5917967A

公开(公告)日：1999-06-29

申请号：US861387

申请日：1997-05-21

申请人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

发明人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

IPC分类号： G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/43

CPC分类号： G02B6/10 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12176 ,  G02B6/43

摘要： An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a to plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

摘要翻译： 一种具有光波导作为器件互连的光电子集成电路（OEIC）。 通过在基本上降低膜的孔隙率和材料从衬底扩散到膜中的温度下，在半导体衬底上在无氧气氛中沉积半导体材料的膜而形成光波导。 蚀刻具有大于基板的折射率的半导体膜，以在基板上形成光波导。 基板还支撑一个至多个有源光学器件，光波导延伸在其间。 衬底优选由砷化镓和来自锗的波导形成。 有源器件还可以包括这些材料以及砷化镓铝。 当使用这些材料时，锗膜在大约100摄氏度的无氧环境中沉积。

公开(公告)号：US06311003B1

公开(公告)日：2001-10-30

申请号：US09256579

申请日：1999-02-24

申请人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

发明人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

IPC分类号： G02B610

CPC分类号： G02B6/10 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/43 ,  G02B2006/12176

摘要： An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide.

摘要翻译： 一种具有光波导作为器件互连的光电子集成电路（OEIC）。 通过在基本上降低膜的孔隙率和材料从衬底扩散到膜中的温度下，在半导体衬底上在无氧气氛中沉积半导体材料的膜而形成光波导。 蚀刻具有大于基板的折射率的半导体膜，以在基板上形成光波导。 基板还支撑多个有源光学器件，光波导延伸在该有源光学器件之间。 衬底优选由砷化镓和来自锗的波导形成。 有源器件还可以包括这些材料以及砷化镓铝。

公开(公告)号：US6051445A

公开(公告)日：2000-04-18

申请号：US267918

申请日：1999-02-24

申请人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

发明人： Madan Dubey ,  Kenneth A. Jones ,  Weiyu Han ,  Lawrence C. West

IPC分类号： G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/43 ,  H01L21/20

CPC分类号： G02B6/10 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12176 ,  G02B6/43

摘要： An optical electronic integrated (circuit (OEIC) having optical waveguidess device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

摘要翻译： 一种具有光波导作为器件互连的光学电子集成（电路（OEIC）），通过在无氧气氛中在半导体衬底上沉积半导体材料的膜而形成光波导，该温度基本上降低了半导体衬底的孔隙率 膜和材料从衬底扩散到膜中，其折射率大于衬底的半导体膜被蚀刻以在衬底上形成光波导，衬底还支撑多个有源光学 光波导延伸的装置，基板优选由砷化镓和锗的波导形成，有源器件还可以包括这些材料以及砷化镓铝，当使用这些材料时，锗膜被沉积 在无氧环境中约100摄氏度。

公开(公告)号：US5898210A

公开(公告)日：1999-04-27

申请号：US665160

申请日：1996-06-14

申请人： Weiyu Han ,  Peter G. Newman

发明人： Weiyu Han ,  Peter G. Newman

IPC分类号： H01L21/329 ,  H01L29/872 ,  H01L27/095

CPC分类号： H01L29/66212 ,  H01L29/872

摘要： A Schottky diode having a series of stacked layers starting with a conventional substrate having a semi-insulating GaAs layer and an un-doped GaAs buffer layer. An n-type Si--GaAs channel layer is grown on the GaAs buffer layer. A low-temperature-grown GaAs barrier layer covers the center portion of the upper surface of the n-type channel layer. The Schottky diode comprises two terminals. One diode terminal comprises a ohmic contact deposited on the upper surface of the channel layer. This ohmic contact, which is ring-shaped, encircles the barrier layer. The other diode terminal includes a metal layer that forms a Schottky contact with the upper surface of the barrier layer. The Ga-to-As ratio in the low-temperature-grown GaAs barrier layer is adjusted so that the barrier layer contains a sufficient number of free electrons to support current flow for bias voltages above the Schottky barrier height. Under reverse bias, the barrier layer acts as an insulator, preventing diode breakdown at relatively high reverse bias voltages.

摘要翻译： 肖特基二极管具有由具有半绝缘GaAs层和未掺杂GaAs缓冲层的常规衬底开始的一系列堆叠层。 在GaAs缓冲层上生长n型Si-GaAs沟道层。 低温生长的GaAs阻挡层覆盖n型沟道层的上表面的中心部分。 肖特基二极管包括两个端子。 一个二极管端子包括沉积在沟道层的上表面上的欧姆接触。 该欧姆接触是环形的，环绕阻挡层。 另一个二极管端子包括与阻挡层的上表面形成肖特基接触的金属层。 调整低温生长的GaAs阻挡层中的Ga与As的比例，使阻挡层含有足够数量的自由电子以支持高于肖特基势垒高度的偏置电流的电流。 在反向偏压下，阻挡层用作绝缘体，防止在相对较高的反向偏置电压下的二极管击穿。