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公开(公告)号:US20190212498A1
公开(公告)日:2019-07-11
申请号:US15864714
申请日:2018-01-08
发明人: Saeed Fathololoumi , Yang Liu , Yaojia Chen
IPC分类号: G02B6/32 , G02B6/12 , H01L31/0232 , H01L31/18
CPC分类号: G02B6/327 , G02B6/12 , G02B2006/12126 , G02B2006/12176 , H01L31/02327 , H01L31/18
摘要: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.
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公开(公告)号:US20180348429A1
公开(公告)日:2018-12-06
申请号:US15992845
申请日:2018-05-30
CPC分类号: G02B6/1223 , G02B27/0172 , G02B2006/12038 , G02B2006/12107 , G02B2006/12176 , G06F3/011
摘要: Embodiments described herein relate to apparatus and methods for display structure fabrication. In one embodiment, a waveguide structure having an input grating structure and an output grating structure is fabricated and a spacer material is deposited on the waveguide. The spacer material is etched from various portions of the waveguide structure and a high refractive index material is deposited on the waveguide. Portions of the spacer material remaining on the waveguide structure are removed leaving the high refractive index material disposed on desired surfaces of the waveguide structure.
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公开(公告)号:US10063031B2
公开(公告)日:2018-08-28
申请号:US15460258
申请日:2017-03-16
发明人: Kazuhisa Takagi
CPC分类号: H01S5/12 , G02B6/122 , G02B6/136 , G02B2006/12097 , G02B2006/12107 , G02B2006/12121 , G02B2006/12126 , G02B2006/12142 , G02B2006/12161 , G02B2006/12173 , G02B2006/12176 , H01S5/0203 , H01S5/026 , H01S5/0265 , H01S5/06258 , H01S5/1231 , H01S5/2275
摘要: A diffraction grating pattern is formed in the first insulating film on the active layer by electron beam lithography, and at the same time an end facet formation pattern whose end portion corresponds to a position of an emission end facet of the optical modulator is formed in the first insulating film on the optical absorption layer by electron beam lithography. A second insulating film is formed on the end facet formation pattern. The diffraction grating formation layer is etched using the first and second insulating films as masks to form a diffraction grating, and is embedded with an embedded layer. The second insulating film is removed. A third insulating film is formed on the diffraction grating and the embedded layer not to cover the end facet formation pattern. The optical absorption layer is etched using the first and third insulating films as masks to form the emission end facet.
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公开(公告)号:US10007057B2
公开(公告)日:2018-06-26
申请号:US15347314
申请日:2016-11-09
IPC分类号: G02B6/12 , G02B6/122 , G02B6/42 , H01L31/0216 , H01L31/103 , H01L31/18 , G02B6/132
CPC分类号: G02B6/12004 , G02B6/12002 , G02B6/122 , G02B6/132 , G02B6/4201 , G02B6/428 , G02B2006/12121 , G02B2006/12123 , G02B2006/12176 , H01L31/02161 , H01L31/1035 , H01L31/1828 , H01L31/184
摘要: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.
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公开(公告)号:US09933568B2
公开(公告)日:2018-04-03
申请号:US15363663
申请日:2016-11-29
发明人: Tohru Kawai , Yasutaka Nakashiba
IPC分类号: G02B6/122 , H01L21/265 , H01L21/768 , H01L23/522 , H01L23/528 , H01L29/36 , G02B6/12
CPC分类号: G02B6/122 , G02B6/12004 , G02B2006/12061 , G02B2006/12123 , G02B2006/12142 , G02B2006/12176 , H01L21/26506 , H01L21/76898 , H01L23/5226 , H01L23/528 , H01L29/36
摘要: Provided is an SOI substrate which has a substrate, an insulating layer formed over the substrate, and a semiconductor layer formed over the insulating layer. Optical waveguides are formed in the semiconductor layer of the SOI substrate. This substrate has a low resistance semiconductor layer and a high resistance semiconductor layer thereover. Further, wirings which are formed through insulating films are provided on the optical waveguides. In this manner, the low resistance semiconductor layer is arranged in the surface part of the substrate of the insulating films, thereby restraining an eddy current generated in the substrate due to an electric signal transmitted through the wirings.
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公开(公告)号:US09869829B2
公开(公告)日:2018-01-16
申请号:US14467721
申请日:2014-08-25
CPC分类号: G02B6/423 , G02B6/122 , G02B6/136 , G02B6/138 , G02B6/30 , G02B6/3636 , G02B6/3652 , G02B6/42 , G02B6/421 , G02B6/4214 , G02B6/4228 , G02B6/4243 , G02B6/4249 , G02B2006/12176 , Y10S430/146
摘要: A process for preparing a subassembly, the process comprising (a) defining the location of one or more grooves for receiving at least one polymer waveguide in a wafer, (b) etching the grooves into the wafer, each groove having sidewalls and a first facet at the terminal end perpendicular to the side walls, the first facet having a first angle relative to the top planar surface, (c) coating the first facet with a reflective material, and (d) disposing a fluid polymer waveguide precursor into each groove, and writing a core into the polymer material by directing at least one laser beam on the first facet by directing the laser beam into the top of the polymer material such that the beam reflects off of the first facet and down the interior of the polymer material to form the core in the polymer waveguide.
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公开(公告)号:US09823419B1
公开(公告)日:2017-11-21
申请号:US15279684
申请日:2016-09-29
CPC分类号: G02B6/30 , G02B6/122 , G02B6/136 , G02B2006/12176
摘要: An optical system may include a substrate that includes an etched region and a laser-induced breakage region. The optical system may further include an optical waveguide disposed on the substrate. The optical system may further include an optical device coupled to the optical waveguide within the etched region. The laser-induced breakage region may produce a predetermined coupling gap between the optical waveguide and the optical device.
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公开(公告)号:US09658398B2
公开(公告)日:2017-05-23
申请号:US15096996
申请日:2016-04-12
CPC分类号: G02B6/125 , G02B6/12 , G02B6/136 , G02B6/3652 , G02B6/423 , G02B6/4243 , G02B2006/12119 , G02B2006/12147 , G02B2006/12166 , G02B2006/12173 , G02B2006/12176 , Y10T156/10
摘要: A system comprises a first optical component comprising at least one waveguide and at least one self-alignment feature; and a second optical component comprising at least another waveguide and at least another self-alignment feature; wherein the self-alignment feature of the second optical component engage to assist in optically-coupling the waveguide of the first optical component and the waveguide of the second optical component when the first optical component has a manufacturing tolerance in a given geometric dimension and is mounted in the second optical component.
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公开(公告)号:US09606047B2
公开(公告)日:2017-03-28
申请号:US14901639
申请日:2014-06-26
发明人: Fredrik Höök , Björn Agnarsson , Anders Lundgren , Anders Gunnarsson , Marta Bally , Lisa Simonsson Nyström
CPC分类号: G01N21/01 , G01N21/6428 , G01N21/6458 , G01N21/648 , G01N2201/061 , G01N2201/06113 , G01N2201/062 , G01N2201/08 , G02B6/1221 , G02B21/16 , G02B2006/12176
摘要: A waveguide structure for evanescent wave microscopy and/or spectroscopy, comprising an optically transparent core layer, a lower dielectric cladding layer and an upper dielectric cladding layer arranged on opposite sides of the core layer. The core layer has a refractive index higher than the refractive indices of the cladding layers. The upper cladding layer is made of an organic material. A sample well is arranged on an upper surface of the core layer formed by a cavity in the upper cladding layer, the sample well being adapted to contain a sample medium with one or more sample objects. The core layer is made of a first dielectric inorganic material, and the upper cladding layer has a refractive index which closely matches the refractive index of the sample medium. A method for manufacturing such waveguide structure, and a measurement system comprising the waveguide structure are also disclosed.
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公开(公告)号:US09595805B2
公开(公告)日:2017-03-14
申请号:US14493022
申请日:2014-09-22
发明人: Cheng-Wei Cheng , Ning Li , Devendra K. Sadana , Kuen-Ting Shiu
CPC分类号: H01S5/021 , G02B6/12004 , G02B6/1228 , G02B6/131 , G02B6/136 , G02B6/42 , G02B2006/12061 , G02B2006/12078 , G02B2006/12121 , G02B2006/12176 , H01S5/026 , H01S5/0425 , H01S5/343 , H01S2301/176
摘要: A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.
摘要翻译: 一种半导体器件,包括:衬底结构,其包括半导体材料层,所述半导体材料层直接存在于所述衬底结构的第一部分中的埋置电介质层上;以及隔离电介质材料,其直接存在于所述衬底的第二部分中的所述掩埋电介质层上 结构体。 半导体器件还包括III-V光电子器件,其在衬底结构的第二部分的第一区域中与隔离电介质材料直接接触。 电介质波导在衬底结构的第二部分的第二区域中与隔离电介质材料直接接触。
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