公开(公告)号：US20130207157A1

公开(公告)日：2013-08-15

申请号：US13852366

申请日：2013-03-28

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Martin ARNOLD ,  Thomas STIASNY

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.

Abstract translation: 一种示例性的反向导电功率半导体器件，其具有晶片，该晶片具有平行于第一主侧的第一主侧和第二主侧。 该装置包括多个二极管单元和多个IGCT单元，每个IGCT单元包括在第一和第二主侧之间：第一阳极电极，第一阳极电极上的第一导电类型的第一阳极层，缓​​冲层 在第一阳极层上具有第二导电类型的漂移层，缓冲层上的第二导电类型的漂移层，漂移层上的第一导电类型的基极层，基底层上的第二导电类型的第一阴极层 和第一阴极层上的阴极电极。 混合部分包括与IGCT电池的第一阴极层交替的二极管单元的第二阳极层。