公开(公告)号：US20140034997A1

公开(公告)日：2014-02-06

申请号：US14046156

申请日：2013-10-04

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Arnost KOPTA ,  Thomas CLAUSEN ,  Maxi ANDENNA

IPC: H01L29/66 ,  H01L29/739

CPC classification number: H01L29/66325 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

Abstract: A method for manufacturing a bipolar punch-through semiconductor device is disclosed, which includes providing a wafer having a first and a second side, wherein on the first side a high-doped layer of the first conductivity type having constant high doping concentration is arranged; epitaxially growing a low-doped layer of the first conductivity type on the first side; performing a diffusion step by which a diffused inter-space region is created at the inter-space of the layers; creating at least one layer of the second conductivity type on the first side; and reducing the wafer thickness within the high-doped layer on the second side so that a buffer layer is created, which can include the inter-space region and the remaining part of the high-doped layer, wherein the doping profile of the buffer layer decreases steadily from the doping concentration of the high-doped region to the doping concentration of the drift layer.

Abstract translation: 公开了一种制造双极穿通半导体器件的方法，其包括提供具有第一和第二侧的晶片，其中在第一侧上布置具有恒定的高掺杂浓度的第一导电类型的高掺杂层; 在第一侧上外延生长第一导电类型的低掺杂层; 执行扩散步骤，通过该扩散步骤在层的间隔处产生扩散的空间间区域; 在第一侧产生至少一层第二导电类型; 并且减小第二侧上的高掺杂层内的晶片厚度，从而形成缓冲层，其可以包括空间间区域和高掺杂层的剩余部分，其中缓冲层的掺杂分布 从高掺杂区域的掺杂浓度稳定地降低到漂移层的掺杂浓度。

公开(公告)号：US20160013302A1

公开(公告)日：2016-01-14

申请号：US14748774

申请日：2015-06-24

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Martin ARNOLD ,  Jan VOBECKY ,  Umamaheswara VEMULAPATI

IPC: H01L29/74 ,  H01L27/06

CPC classification number: H01L29/7416 ,  H01L27/0664 ,  H01L29/744

Abstract: A reverse-conducting power semiconductor device with a wafer has first and second main sides which are arranged opposite and parallel to each other. The device includes a plurality of diode cells and a plurality of gate commutated thyristors (GCT) cells. Each GCT cell includes layers of a first conductivity type (e.g., n-type) and a second conductivity type (e.g., p-type) between the first and second main sides. The device includes at least one mixed part in which diode anode layers of the diode cells alternate with first cathode layers of the GCT cells. In each diode cell, a diode buffer layer of the first conductivity type is arranged between the diode anode layer and a drift layer such that the diode buffer layer covers lateral sides of the diode anode layer from the first main side to a depth of approximately 90% of the thickness of the diode anode layer.

Abstract translation: 具有晶片的反向导通功率半导体器件具有彼此相对并平行布置的第一和第二主侧面。 该器件包括多个二极管单元和多个栅极换向晶闸管（GCT）单元。 每个GCT单元包括在第一和第二主侧之间的第一导电类型（例如，n型）和第二导电类型（例如，p型）的层。 该器件包括至少一个混合部分，其中二极管单元的二极管阳极层与GCT单元的第一阴极层交替。 在每个二极管单元中，第二导电类型的二极管缓冲层布置在二极管阳极层和漂移层之间，使得二极管缓冲层覆盖二极管阳极层的从第一主侧到大约90度的深度的侧面 二极管阳极层的厚度的百分比。

公开(公告)号：US20140124829A1

公开(公告)日：2014-05-08

申请号：US14149412

申请日：2014-01-07

Applicant: ABB TECHNOLOGY AG

Inventor： Maxi ANDENNA ,  Munaf RAHIMO ,  Chiara CORVASCE ,  Arnost KOPTA

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7397 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/66348 ,  H01L29/7395

Abstract: An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode.

Abstract translation: IGBT在发射极和集电极侧之间具有层。 这些层包括在集电极侧的集电极层，漂移层，第二导电类型的基极层，布置在基底层上朝向发射极侧的第一源极区域，设置在基极层的侧面并延伸的沟槽栅电极 漂移层比基层更深，井底侧布置在基层上并且比基层更深地延伸到漂移层中，围绕基层的增强层，以便使基层与漂移层完全分离，并且 阱，覆盖阱并通过第二电绝缘层与阱分离的导电层，以及在导电层顶部具有凹陷的第三绝缘层，使得导电层与发射极电气接触。

公开(公告)号：US20130207157A1

公开(公告)日：2013-08-15

申请号：US13852366

申请日：2013-03-28

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Martin ARNOLD ,  Thomas STIASNY

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.

Abstract translation: 一种示例性的反向导电功率半导体器件，其具有晶片，该晶片具有平行于第一主侧的第一主侧和第二主侧。 该装置包括多个二极管单元和多个IGCT单元，每个IGCT单元包括在第一和第二主侧之间：第一阳极电极，第一阳极电极上的第一导电类型的第一阳极层，缓​​冲层 在第一阳极层上具有第二导电类型的漂移层，缓冲层上的第二导电类型的漂移层，漂移层上的第一导电类型的基极层，基底层上的第二导电类型的第一阴极层 和第一阴极层上的阴极电极。 混合部分包括与IGCT电池的第一阴极层交替的二极管单元的第二阳极层。

公开(公告)号：US20140124831A1

公开(公告)日：2014-05-08

申请号：US14154790

申请日：2014-01-14

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Maxi Andenna ,  Chiara Corvasce ,  Arnost Kopta

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7395 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/7397

Abstract: An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel exits between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrode. An enhancement layer separates the base layer from the drift layer in a plane parallel to the emitter side. A grounded gate electrode includes a second, grounded trench gate electrode and an electrically conducting layer.

Abstract translation: IGBT在发射极和集电极侧之间具有层。 这些层包括漂移层，与发射电极电接触并与漂移层分离的基极层，布置在基底层上朝向发射极侧并电接触发射极的第一源极区域和布置在侧面上的第一沟槽栅电极 并且通过第一绝缘层与基底层，第一源极区域和漂移层分离。 一个通道在发射电极，第一源极区域，基极层和漂移层之间离开。 第二绝缘层设置在第一沟槽栅电极的顶部。 增强层在与发射极侧平行的平面中分离基底层与漂移层。 接地栅电极包括第二接地沟槽栅电极和导电层。

公开(公告)号：US20130334566A1

公开(公告)日：2013-12-19

申请号：US13974178

申请日：2013-08-23

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Marco Bellini ,  Maxi Andenna ,  Friedhelm Bauer ,  Iulian Nistor

IPC: H01L29/739

CPC classification number: H01L29/0813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/7395 ,  H01L29/7397

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract translation: 公开了一种绝缘栅极双极器件，其可以包括以下顺序在发射极侧的发射极和集电极侧的集电极之间具有不同导电类型的层：第一导电类型的源极区域，第一导电类型的基极层 在接触区域中与发射极接触的第二导电类型，第一导电类型的增强层，具有补偿层厚度tp的第二导电类型的浮置补偿层，具有较低掺杂的第一导电类型的漂移层 浓度比增强层和第二导电类型的集电极层。

公开(公告)号：US20140370665A1

公开(公告)日：2014-12-18

申请号：US14477229

申请日：2014-09-04

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Chiara Corvasce ,  Jan Vobecky ,  Yoichi Otani

IPC: H01L29/66 ,  H01L21/283 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L29/66325 ,  H01L21/2251 ,  H01L21/283 ,  H01L21/324 ,  H01L29/0834 ,  H01L29/45 ,  H01L29/456 ,  H01L29/6609 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/8613

Abstract: A method for manufacturing a power semiconductor device is disclosed which can include: providing a wafer of a first conductivity type; and applying on a second main side of the wafer at least one of a dopant of the first conductivity type for forming a layer of the first conductivity type and a dopant of a second conductivity type for forming a layer of the second conductivity type. A Titanium layer with a metal having a melting point above 1300° C. is then deposited on the second main side. The Titanium deposition layer is annealed so that simultaneously an intermetal compound layer is formed at the interface between the Titanium deposition layer and the wafer and the dopant is diffused into the wafer. A first metal electrode layer is created on the second main side.

Abstract translation: 公开了一种用于制造功率半导体器件的方法，其可以包括：提供第一导电类型的晶片; 以及在所述晶片的第二主侧上施加用于形成第一导电类型的第一导电类型的掺杂剂和用于形成第二导电类型的层的第二导电类型的掺杂剂中的至少一种。 然后将具有熔点高于1300℃的金属的钛层沉积在第二主侧上。 钛沉积层进行退火，从而在钛沉积层和晶片之间的界面处同时形成金属间化合物层，并且掺杂剂扩散到晶片中。 在第二主面上形成第一金属电极层。

公开(公告)号：US20140124830A1

公开(公告)日：2014-05-08

申请号：US14154736

申请日：2014-01-14

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Maxi ANDENNA ,  Chiara CORVASCE ,  Arnost KOPTA

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7395 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/7397

Abstract: An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first and second trench gate electrodes. The first trench gate electrodes are separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel is formable between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrodes. An enhancement layer separates the base layer from the drift layer. The second trench gate electrode is separated from the base layer, the enhancement layer and the drift layer by a third insulating layer.

Abstract translation: IGBT在发射极和集电极侧之间具有层，包括漂移层，与发射极电气接触并与漂移层完全分离的基极层，布置在基极层上的发射极侧的第一和第二源极区域，并且电接触发射极 电极，以及第一和第二沟槽栅电极。 第一沟槽栅极电极通过第一绝缘层与基极层，第一源极区域和漂移层分离。 在发射电极，第一源极区域，基极层和漂移层之间形成通道。 第二绝缘层设置在第一沟槽栅电极的顶部。 增强层将基底层与漂移层分开。 第二沟槽栅极电极通过第三绝缘层与基极层，增强层和漂移层分离。

公开(公告)号：US20130228823A1

公开(公告)日：2013-09-05

申请号：US13861074

申请日：2013-04-11

Applicant: ABB TECHNOLOGY AG

Inventor： Munaf RAHIMO ,  Wolfgang Janisch ,  Eustachio Faggiano

IPC: H01L27/06

CPC classification number: H01L27/0664 ,  H01L29/0834 ,  H01L29/41708 ,  H01L29/66333 ,  H01L29/7395

Abstract: A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created on the collector side. An electrical contact in direct electrical contact with the first and second layers is created on the collector side. A shadow mask is applied on the collector side, and a third layer of the first conductivity type is created through the shadow mask. At least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The island is used as a mask for creating the second layer, and those parts of the third layer which are covered by the island form the second layer.

Abstract translation: 提供了包括续流二极管和绝缘栅双极晶体管（IGBT）的反向导电半导体器件（RC-IGBT）以及制造RC-IGBT的方法。 在集电器侧产生第二导电类型的第二层之前，在集电极侧产生第一导电类型的第一层。 在集电器侧产生与第一和第二层直接电接触的电接触。 在收集器侧施加荫罩，通过荫罩产生第一导电类型的第三层。 通过荫罩产生至少一个作为最终RC-IGBT中的第二电接触部分的导电岛。 岛用作创建第二层的掩模，并且被岛覆盖的第三层的那些部分形成第二层。