公开(公告)号：US20240400462A1

公开(公告)日：2024-12-05

申请号：US18804292

申请日：2024-08-14

Applicant: AGC Inc.

Inventor： Rui HAYASHI ,  Shuhei OGAWA ,  Koki TANAKA ,  Hiroyuki YAMAMOTO

IPC: C04B35/565 ,  C04B41/45 ,  C04B41/50 ,  C04B41/91

Abstract: Provided is a conventionally unavailable, novel SiSiC component. The SiSiC component has at least one long hole formed therein, wherein the long hole has a diameter of 2 mm or smaller, wherein the long hole has a length of 100 mm or longer, and wherein the content of elemental Si is 10 to 60 vol %.

公开(公告)号：US20240191345A1

公开(公告)日：2024-06-13

申请号：US18411398

申请日：2024-01-12

Applicant: AGC Inc.

Inventor： Rui HAYASHI ,  Tomonori OGAWA ,  Koji KAWAHARA

IPC: C23C16/32

CPC classification number: C23C16/325

Abstract: A component for a semiconductor production apparatus includes a part of polycrystalline silicon carbide (SiC) produced through chemical vapor deposition (CVD), the part being of the component. The part of the polycrystalline SiC includes a first dopant with which the part of the polycrystalline SiC is doped in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % with respect to an entirety of the part. The first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).