公开(公告)号：US20230223241A1

公开(公告)日：2023-07-13

申请号：US18181152

申请日：2023-03-09

Applicant: AGC Inc.

Inventor： Koji KAWAHARA ,  Tomonori OGAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01L21/67069 ,  H01J37/3244 ,  H01J2237/334

Abstract: A component for a film formation apparatus or an etching apparatus used for manufacturing semiconductors, the component including a disk-shaped or ring-shaped SiC film having an outer diameter of 300 mm or more and a thickness of 3 mm or more. The component does not include an interface extending perpendicularly to a thickness direction of the SiC film on an exposed side surface of the SiC film.

公开(公告)号：US20240191345A1

公开(公告)日：2024-06-13

申请号：US18411398

申请日：2024-01-12

Applicant: AGC Inc.

Inventor： Rui HAYASHI ,  Tomonori OGAWA ,  Koji KAWAHARA

IPC: C23C16/32

CPC classification number: C23C16/325

Abstract: A component for a semiconductor production apparatus includes a part of polycrystalline silicon carbide (SiC) produced through chemical vapor deposition (CVD), the part being of the component. The part of the polycrystalline SiC includes a first dopant with which the part of the polycrystalline SiC is doped in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % with respect to an entirety of the part. The first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).

公开(公告)号：US20220024803A1

公开(公告)日：2022-01-27

申请号：US17449829

申请日：2021-10-04

Applicant: AGC Inc.

Inventor： Hiroyuki HIJIYA ,  Yutaka KUROIWA ,  Kazutaka ONO ,  Tomonori OGAWA ,  Yusaku MATSUO

IPC: C03C3/087 ,  C03B17/06 ,  C03C4/14

Abstract: A glass plate has a dielectric dissipation factor at 10 GHz of tan δA and a glass transition temperature of Tg° C. The glass plate satisfies (tan δ100−tan δA)≥0.0004, where tan δ100 is a dielectric dissipation factor of the glass plate at 10 GHz after having been heated to (Tg+50)° C. and then cooled to (Tg−150)° C. at 100° C./min.

公开(公告)号：US20240425979A1

公开(公告)日：2024-12-26

申请号：US18802049

申请日：2024-08-13

Applicant: AGC Inc. ,  TSUBASA SCIENCE CORPORATION

Inventor： Michio ISHIKAWA ,  Michio TANIMURA ,  Shuhei OGAWA ,  Tomonori OGAWA

IPC: C23C16/40 ,  C23C16/448

Abstract: The present invention relates to an yttrium-based protective film having: a peak intensity ratio of Y5O4F7 in an X-ray diffraction pattern of 80% or more; a porosity of less than 1.5 volume %; and a Vickers hardness of 500 MPa or more. The yttrium-based protective film may have a content of fluorine of 35 atom % to 60 atom %.

公开(公告)号：US20240425407A1

公开(公告)日：2024-12-26

申请号：US18825001

申请日：2024-09-05

Applicant: AGC Inc.

Inventor： Shuhei OGAWA ,  Tomonori OGAWA ,  Kazuki KANEHARA

IPC: C03C4/20 ,  C03B19/02 ,  C03B25/02 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C3/112 ,  C03C3/118 ,  H01J37/32

Abstract: A glass block for a plasma resistant member, including silicon and at least one of magnesium and calcium, in which, in terms of mole percentage based on an oxide, a total content of MgO and CaO is 3.0 mol % or more and less than 29.0 mol %, a content of R2O is 3.0 mol % or more and less than 35.0 mol %, and a content of R12O is 8.0 mol % or less, provided that R1 is an alkali metal element and R2 is an alkaline earth metal element.

公开(公告)号：US20230034469A1

公开(公告)日：2023-02-02

申请号：US17936146

申请日：2022-09-28

Applicant: AGC Inc.

Inventor： Takato KAJIHARA ,  Hiroyuki HIJIYA ,  Tomonori OGAWA ,  Kosho AKATSUKA

IPC: C03C10/00 ,  C03C4/16 ,  C03B32/02

Abstract: The present invention relates to a crystallized glass including a crystalline phase consisting of Ba—Si—O, in which the crystallized glass includes Li, and crystallinity of Li-based crystals contained in the crystalline phase is 20% or lower as represented by weight %, a high-frequency substrate including the crystallized glass, and a manufacturing method for a crystallized glass including a crystalline phase consisting of Ba—Si—O, the method including: obtaining an amorphous glass by melt-shaping a material containing BaO and SiO2; and crystallizing the amorphous glass by holding the amorphous glass at a treatment temperature of 600° C. or higher and lower than 1,000° C.

公开(公告)号：US20230093194A1

公开(公告)日：2023-03-23

申请号：US18060058

申请日：2022-11-30

Applicant: AGC Inc.

Inventor： Tomonori OGAWA ,  Yutaka KUROIWA ,  Kosho AKATSUKA ,  Hiroyuki HIJIYA

IPC: C03C11/00 ,  C03B19/06 ,  C03B32/00 ,  C03C15/00 ,  C03C23/00

Abstract: A method for producing a high silicate glass substrate, includes: (1) obtaining a glass precursor containing, as represented by mol % based on oxides, 60% to 75% of SiO2, 0% to 15% of Al2O3, 15% to 30% of B2O3, 0% to 3% of P2O5, and 1% to 10% in total of at least one selected from R2O and R′O; (2) applying first heat treatment to the glass precursor to cause phase separation so as to obtain a phase-separated glass; (3) applying acid treatment to the phase-separated glass to make the phase-separated glass porous so as to obtain a porous glass; (4) drying the porous glass so that a rate of change in mass reaches 10% to 50%; and (5) applying second heat treatment to the porous glass to sinter the porous glass so as to obtain a high silicate glass substrate.