公开(公告)号：US20240347337A1

公开(公告)日：2024-10-17

申请号：US18656209

申请日：2024-05-06

Applicant: Lam Research Corporation

Inventor： Joseph R. Abel ,  Douglas Walter Agnew ,  Adrien Lavoie ,  Ian John Curtin ,  Purushottam Kumar

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/308 ,  C23C16/325 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02211

Abstract: Various embodiments include methods to produce low dielectric-constant (low-κ) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-κ materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.

公开(公告)号：US20240279799A1

公开(公告)日：2024-08-22

申请号：US18649302

申请日：2024-04-29

Applicant: AGILENT TECHNOLOGIES, INC.

Inventor： Elizabeth Carr ,  Karen L. Seaward ,  Kevin P. Killeen

IPC: C23C16/24 ,  B01D15/22 ,  C23C16/04 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/24 ,  B01D15/22 ,  C23C16/045 ,  C23C16/325 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45555 ,  Y10T428/13

Abstract: The invention provides metal liquid chromatography components with uniformly coated internal surfaces and methods for achieving the same. The invention addresses the problem of corrosion or interference of metal components in the flow path for LC analyses in which the sample interacts with metal ions or surfaces. The invention also alleviates the difficulties in coating very long metal tubes and very small metal channels with an inert, continuous coating that adheres well to metal surfaces. The metal flow path is rendered inert by the coating, and thus compatible with bioanalytical separations, for example, by using a vapor phase deposition process to coat the inner surfaces with a coating that continuously covers all metal surfaces in the flow path.

公开(公告)号：US12065732B2

公开(公告)日：2024-08-20

申请号：US17425581

申请日：2020-01-27

Applicant: Tokyo Electron Limited

Inventor： Masayuki Harashima ,  Yukio Sano ,  Michikazu Nakamura ,  Hirokatsu Kobayashi

IPC: C23C16/32 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/325 ,  C23C16/4405 ,  C23C16/4583

Abstract: A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

公开(公告)号：US12060304B2

公开(公告)日：2024-08-13

申请号：US18161343

申请日：2023-01-30

Applicant: RTX CORPORATION

Inventor： Richard Wesley Jackson ,  Ying She ,  Gajawalli V. Srinivasan

IPC: C04B35/80 ,  C04B35/628 ,  C23C16/32 ,  C23C16/56 ,  D06M11/74 ,  D06M11/79

CPC classification number: C04B35/80 ,  C04B35/62849 ,  C04B35/62863 ,  C04B35/62884 ,  C04B35/62894 ,  C04B35/62897 ,  C23C16/325 ,  C23C16/56 ,  D06M11/74 ,  D06M11/79 ,  C04B2235/5228 ,  C04B2235/5232 ,  C04B2235/524 ,  C04B2235/5244

Abstract: Disclosed is a coated ceramic fiber including a silicon carbide coating layer adjacent to the ceramic fiber and a silicon dioxide coating layer adjacent to the silicon carbide coating layer, wherein the silicon dioxide coating layer forms micro cracks after a crystal structure transformation. The coated ceramic fiber may be included in a composite material having a ceramic matrix.

公开(公告)号：US20240234544A1

公开(公告)日：2024-07-11

申请号：US18538267

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Sai Hooi Yeong ,  Benjamin Colombeau ,  Liu Jiang ,  El Mehdi Bazizi ,  Byeong Chan Lee ,  Balasubramanian Pranatharthiharan

IPC: H01L29/66 ,  C23C16/02 ,  C23C16/04 ,  C23C16/32 ,  C23C16/40 ,  C23C16/56 ,  C30B25/04 ,  C30B25/18 ,  C30B29/06 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/66553 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/325 ,  C23C16/401 ,  C23C16/56 ,  C30B25/04 ,  C30B25/186 ,  C30B29/06 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices, and inner spacer liners and inner spacers for GAA devices, are described. The methods comprise forming an inner spacer liner within a superlattice structure formed on a top surface of a semiconductor substrate. The superlattice structure has a plurality of recessed semiconductor material layers (e.g., silicon germanium (SiGe)) and a corresponding plurality of channel layers (e.g., silicon (Si)) alternatingly arranged in a plurality of stacked pairs. The inner spacer liner comprises a crystalline silicon-containing liner formed by a selective epitaxial growth (SEG) process. The crystalline silicon-containing liner may be doped with a dopant (e.g., a p-type dopant or an n-type dopant). One or more operations of the methods described herein are performed in situ in an integrated processing tool system.

公开(公告)号：US20240167152A1

公开(公告)日：2024-05-23

申请号：US18466924

申请日：2023-09-14

Applicant: RTX Corporation

Inventor： Christian X. Campbell ,  David J. Wasserman ,  Ahmed Abdillahi Abdi

IPC: C23C16/32 ,  B23B41/00 ,  C23C16/34

CPC classification number: C23C16/325 ,  B23B41/00 ,  C23C16/345 ,  B23B2215/81 ,  B23B2226/18 ,  B23B2226/27

Abstract: A method for processing a CMC airfoil includes nesting an airfoil fiber preform in a cavity of a fixture that has first and second tool segments, closing the fixture by rotating a first tool segment about a hinge, the closing causing the tool segments to clamp on a tail portion of the fiber preform and thereby conform the tail portion to the fixture. While in the fixture, the fiber preform is then partially densified with an interface coating material to form a partially densified fiber preform. While still in the fixture, one or more cooling holes are drilled into the trailing edge of the partially densified fiber preform. After the drilling, the partially densified fiber preform is removed from the fixture and further densified with a ceramic matrix material to form a fully densified CMC airfoil.

公开(公告)号：US20240158911A1

公开(公告)日：2024-05-16

申请号：US18382977

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Peter J. GUERCIO ,  Paul WESTPHAL ,  Kirk Allen FISHER

IPC: C23C16/32 ,  C01B32/21 ,  C23C16/04

CPC classification number: C23C16/325 ,  C01B32/21 ,  C23C16/045

Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

公开(公告)号：US20240141550A1

公开(公告)日：2024-05-02

申请号：US18476507

申请日：2023-09-28

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： HIROAKI FUJIBAYASHI ,  MASATAKE NAGAYA ,  JUNJI OHARA ,  SHINICHI HOSHI

IPC: C30B25/10 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C30B29/36

CPC classification number: C30B25/10 ,  C23C16/325 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/12 ,  C30B29/36

Abstract: A silicon carbide wafer manufacturing apparatus includes a mounting unit disposed in a reaction chamber. The mounting unit includes a susceptor portion having a mounting surface on which a rear surface of a seed substrate is to be mounted, and a guide portion disposed on the susceptor portion in a state of surrounding the seed substrate. The mounting unit is configured such that a first interval between the seed substrate and the guide portion on an upstream side in a step-flow growth direction is narrower than a second interval between the seed substrate and the guide portion on a downstream side in the step-flow growth direction when an epitaxial layer is grown. The guide portion is configured such that a temperature of the guide portion is lower than a temperature of the seed substrate when the epitaxial layer is grown.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US20240084446A1

公开(公告)日：2024-03-14

申请号：US18465787

申请日：2023-09-12

Applicant: ASM IP Holding, B.V.

Inventor： Iordan Iordanov ,  Christiaan Werkhoven ,  Loke Yuen Wong ,  Ivo Johannes Raaijmakers ,  Osama Khalil

IPC: C23C16/40 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/40 ,  C23C16/325 ,  C23C16/34 ,  C23C16/45553 ,  C23C16/458

Abstract: A reaction chamber component for use in a deposition apparatus for depositing a layer of a first material on a substrate is provided. The component may have a base material being partially coated with a liner of the first material. The component may have a protective layer of a second material different than the first material on top of the liner of the first material to protect the component. This may be useful during a removal process for removing a parasitic coating of the same first material deposited during use of the reaction chamber component.