-
公开(公告)号：US12278111B2
公开(公告)日：2025-04-15
申请号：US17623804
申请日：2020-06-01
Inventor： Chang-Koo Kim , Jun-Hyun Kim , Jin-Su Park
IPC: H01L21/3065 , C09K13/00 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
Abstract: A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
-
公开(公告)号：US11081361B2
公开(公告)日：2021-08-03
申请号：US16521701
申请日：2019-07-25
Inventor： Chang-Koo Kim , Jun-Hyun Kim , Jin-Su Park
IPC: H01L21/311 , C09K13/08
Abstract: Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
-
公开(公告)号：US12134722B2
公开(公告)日：2024-11-05
申请号：US17760519
申请日：2020-06-01
Inventor： Chang-Koo Kim , Jun-Hyun Kim , Jin-Su Park
IPC: C09K13/00 , H01J37/32 , H01L21/311
Abstract: Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:
-
-
Search Results
3
records
(took 0.013 seconds)
