公开(公告)号：US20150035387A1

公开(公告)日：2015-02-05

申请号：US13955866

申请日：2013-07-31

Applicant: Analog Devices Technology

Inventor： John G. Macnamara ,  Padraig L. Fitzgerald ,  Raymond C. Goggin ,  Bernard P. Stenson

IPC: H01H59/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B7/007 ,  B81B2201/014 ,  B81B2207/092 ,  B81C1/00341 ,  H01H2001/0052 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2924/181 ,  Y10T307/937 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.

Abstract translation: 一种MEMS开关装置，包括：基板层; 形成在所述基板层上的绝缘层; 以及MEMS开关模块，其具有形成在所述绝缘层的表面上的多个触点，其中所述绝缘层包括形成在所述绝缘层内的多个导电路径，所述导电路径被配置为互连所述MEMS开关模块的选定触点。

公开(公告)号：US20150170911A1

公开(公告)日：2015-06-18

申请号：US14108035

申请日：2013-12-16

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Paul Martin Lambkin ,  Padraig L. Fitzgerald ,  Bernard Patrick Stenson ,  Raymond C. Goggin ,  Seamus A. Lynch ,  William A. Lane

IPC: H01L21/02

CPC classification number: H01L21/02524 ,  H01H59/0009 ,  H01H2059/0018 ,  H01L21/02002 ,  H01L21/02373 ,  H01L21/322

Abstract: A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.

Abstract translation: 提供硅衬底，其可以通过使用由Czochralski工艺形成的硅层并且具有沉积在硅层上的载流子寿命消除层，更便宜地形成RF部件。