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1.
公开(公告)号:US10680177B2
公开(公告)日:2020-06-09
申请号:US15744029
申请日:2016-08-04
Applicant: AP SYSTEMS INC.
Inventor: Jong-Kab Park , Bo-Ram Kim , Jun-Gyu Hur , Doh-Hoon Kim
IPC: B23K26/364 , C23C14/04 , H01L51/00 , B23K26/0622 , B23K26/082 , G03F7/30 , H01L51/56 , B23K101/40
Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.
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2.
公开(公告)号:US10428415B2
公开(公告)日:2019-10-01
申请号:US15743944
申请日:2016-08-04
Applicant: AP SYSTEMS INC.
Inventor: Jong-Kab Park , Bo-Ram Kim , Jun-Gyu Hur , Doh-Hoon Kim
IPC: C23C14/04 , H01L21/027 , H01L21/033 , G03F7/095 , G03F7/12 , B23K26/352 , H01L21/31 , H01L51/00
Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.
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