公开(公告)号：US10680177B2

公开(公告)日：2020-06-09

申请号：US15744029

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab Park ,  Bo-Ram Kim ,  Jun-Gyu Hur ,  Doh-Hoon Kim

IPC: B23K26/364 ,  C23C14/04 ,  H01L51/00 ,  B23K26/0622 ,  B23K26/082 ,  G03F7/30 ,  H01L51/56 ,  B23K101/40

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.

公开(公告)号：US10428415B2

公开(公告)日：2019-10-01

申请号：US15743944

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab Park ,  Bo-Ram Kim ,  Jun-Gyu Hur ,  Doh-Hoon Kim

IPC: C23C14/04 ,  H01L21/027 ,  H01L21/033 ,  G03F7/095 ,  G03F7/12 ,  B23K26/352 ,  H01L21/31 ,  H01L51/00

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.

公开(公告)号：US20180202035A1

公开(公告)日：2018-07-19

申请号：US15743944

申请日：2016-08-04

Applicant: AP SYSTEMS INC.

Inventor： Jong-Kab Park ,  Bo-Ram Kim ,  Jun-Gyu Hur ,  Doh-Hoon KIM

IPC: C23C14/04 ,  B23K26/352

CPC classification number: C23C14/042 ,  B23K26/352 ,  G03F7/0957 ,  G03F7/12 ,  H01L21/027 ,  H01L21/0338 ,  H01L21/31 ,  H01L51/0011 ,  Y10S148/143

Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.