公开(公告)号：US20250062123A1

公开(公告)日：2025-02-20

申请号：US18235249

申请日：2023-08-17

Applicant: Applied Materials, Inc.

Inventor： SHASHANK SHARMA ,  KAI B. NG ,  NORMAN TAM ,  YUQI GUO ,  ANDY LO ,  HUIXIONG DAI ,  KHOI PHAN ,  CHIHAN HSU ,  MADHUR SACHAN ,  NASRIN KAZEM ,  ZHENXING HAN

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Embodiments disclosed herein include a method of thermal treatment or radical species treatment of a photoresist a metal-oxide photoresist. In an embodiment, a method of patterning a metal-oxide photoresist, such as a Sn-based photoresist, includes depositing the metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and non-exposed regions, developing the exposed metal-oxide photoresist, and performing a thermal treatment and/or a radical species treatment of the metal-oxide photoresist.

公开(公告)号：US20200255937A1

公开(公告)日：2020-08-13

申请号：US16541688

申请日：2019-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  BYEONG CHAN LEE ,  HUIXIONG DAI ,  TEJINDER SINGH ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: C23C14/54 ,  H01L21/02 ,  C23C14/34 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.