公开(公告)号：US20250028242A1

公开(公告)日：2025-01-23

申请号：US18908553

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： TZU SHUN YANG ,  ZHENXING HAN ,  MADHUR SACHAN ,  LEQUN LIU ,  NASRIN KAZEM ,  LAKMAL CHARIDU KALUTARAGE ,  MARK JOSEPH SALY

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.

公开(公告)号：US20240194484A1

公开(公告)日：2024-06-13

申请号：US18379102

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  PAOLA DE CECCO ,  MADHUR SACHAN ,  KWANGDUK D. LEE ,  MARTHA SANCHEZ ,  LUISA BOZANO

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  G03F7/094

Abstract: Embodiments disclosed herein include a method for forming a photoresist stack. In an embodiment, the method comprises forming a first photoresist layer over a substrate, where the first photoresist layer is formed with a first dry deposition process, and forming a second photoresist layer over the first photoresist layer, where the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.

公开(公告)号：US20240271276A1

公开(公告)日：2024-08-15

申请号：US18403628

申请日：2024-01-03

Applicant: Applied Materials, Inc.

Inventor： LAKMAL KALUTARAGE ,  MADHUR SACHAN ,  MARK SALY ,  ZHENXING HAN

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/06

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.

公开(公告)号：US20200300618A1

公开(公告)日：2020-09-24

申请号：US16711005

申请日：2019-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： REGINA FREED ,  RUSSELL CHIN YEE TEO ,  MADHUR SACHAN

IPC: G01B15/00 ,  H01J37/28

Abstract: Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.

公开(公告)号：US20250028248A1

公开(公告)日：2025-01-23

申请号：US18653340

申请日：2024-05-02

Applicant: Applied Materials, Inc.

Inventor： NASRIN KAZEM ,  LAKMAL CHARIDU KALUTARAGE ,  MADHUR SACHAN ,  MARK SALY ,  ANDREA LEONCINI ,  DOREEN WEI YING YONG

IPC: G03F7/30 ,  G03F7/00 ,  G03F7/004 ,  G03F7/38

Abstract: Embodiments disclosed herein include a method of dry developing a metal-oxide photoresist. In an embodiment, a method of patterning a metal-oxide photoresist, such as a Sn-based photoresist, includes depositing the metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and non-exposed regions, and developing the exposed metal-oxide photoresist using an electron-donor ligand-based dry etch process.

公开(公告)号：US20240319603A1

公开(公告)日：2024-09-26

申请号：US18581290

申请日：2024-02-19

Applicant: Applied Materials, Inc.

Inventor： ZHENXING HAN ,  MADHUR SACHAN ,  RUIYING HAO ,  NANCY FUNG ,  LIKUN WANG ,  GABRIELA ALVA

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/162 ,  G03F7/0043 ,  G03F7/2002

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises depositing a metal-oxo layer over a substrate, and applying a chemically amplified resist (CAR) over the metal-oxo layer. In an embodiment, the method further comprises exposing the CAR, and developing the CAR to form a pattern in the CAR. In an embodiment, the method further comprises transferring the pattern into the metal-oxo layer, and transferring the pattern into the substrate.

公开(公告)号：US20240272552A1

公开(公告)日：2024-08-15

申请号：US18407776

申请日：2024-01-09

Applicant: Applied Materials, Inc.

Inventor： GABRIELA ALVA ,  ZHENXING HAN ,  MADHUR SACHAN ,  CHI-I LANG ,  LIN ZHOU ,  LEQUN LIU ,  NASRIN KAZEM

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/11 ,  G03F7/2026 ,  G03F7/70033

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.

公开(公告)号：US20250062123A1

公开(公告)日：2025-02-20

申请号：US18235249

申请日：2023-08-17

Applicant: Applied Materials, Inc.

Inventor： SHASHANK SHARMA ,  KAI B. NG ,  NORMAN TAM ,  YUQI GUO ,  ANDY LO ,  HUIXIONG DAI ,  KHOI PHAN ,  CHIHAN HSU ,  MADHUR SACHAN ,  NASRIN KAZEM ,  ZHENXING HAN

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Embodiments disclosed herein include a method of thermal treatment or radical species treatment of a photoresist a metal-oxide photoresist. In an embodiment, a method of patterning a metal-oxide photoresist, such as a Sn-based photoresist, includes depositing the metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and non-exposed regions, developing the exposed metal-oxide photoresist, and performing a thermal treatment and/or a radical species treatment of the metal-oxide photoresist.

公开(公告)号：US20250053086A1

公开(公告)日：2025-02-13

申请号：US18769151

申请日：2024-07-10

Applicant: Applied Materials, Inc.

Inventor： MADHUR SACHAN ,  BO XIE ,  LAKMAL CHARIDU KALUTARAGE ,  ZHENXING HAN ,  TZU SHUN YANG ,  LI-QUN XIA

IPC: G03F7/004 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20

Abstract: Embodiments disclosed herein include a method of post development treatment of a metal-oxide photoresist. In an embodiment, a method includes depositing a metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and unexposed regions, developing the exposed metal-oxide photoresist, and performing a surface treatment of the developed metal-oxide photoresist to form a coating on the developed metal-oxide photoresist.

公开(公告)号：US20240027916A1

公开(公告)日：2024-01-25

申请号：US18198073

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  TODD EGAN ,  EDWARD BUDIARTO ,  PAOLA DE CECCO ,  REGINA FREED ,  BEKELE WORKU ,  MADHUR SACHAN ,  LUISA BOZANO ,  KELVIN CHAN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/70653 ,  G03F7/706843 ,  G03F7/70808 ,  G03F7/7085

Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.