公开(公告)号：US20130105086A1

公开(公告)日：2013-05-02

申请号：US13657232

申请日：2012-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  WAHEB BISHARA ,  RYAN GIAR ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  KYLE R. TANTIWONG

IPC: H05H1/46 ,  B44C1/22 ,  H05H1/10

CPC classification number: H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

Abstract translation: 等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈 ，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽被配置为局部引导 由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位 线圈