公开(公告)号：US20130105086A1

公开(公告)日：2013-05-02

申请号：US13657232

申请日：2012-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  WAHEB BISHARA ,  RYAN GIAR ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  KYLE R. TANTIWONG

IPC: H05H1/46 ,  B44C1/22 ,  H05H1/10

CPC classification number: H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

Abstract translation: 等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈 ，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽被配置为局部引导 由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位 线圈

公开(公告)号：US20140273304A1

公开(公告)日：2014-09-18

申请号：US14206723

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： ALVARO GARCIA DE GORORDO ,  WAHEB BISHARA ,  SAMER BANNA

IPC: H01L21/3065 ,  H01L21/66

CPC classification number: H01J37/3266 ,  H01J37/321 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，提供了一种用于处理处理室中的基板的方法，该处理室具有设置在处理室周围的多个电磁体，以至少在基板层处在处理室内形成磁场。 在一些实施例中，该方法包括确定处理室内存在的外部磁场的第一方向，同时不向多个电磁体提供电流; 向所述多个电磁体提供一定范围的电流以在所述处理室内产生具有与所述第一方向相反的第二方向的磁场; 在电流范围内确定磁场的第二方向上的期望幅度; 以及使用等离子体处理处理室中的衬底，同时静态地将所述磁场提供到期望的大小。

公开(公告)号：US20140262044A1

公开(公告)日：2014-09-18

申请号：US14196360

申请日：2014-03-04

Applicant: APPLIED MATERIALS, INC.

Inventor： IMAD YOUSIF ,  SAMER BANNA ,  WAHEB BISHARA ,  ALVARO GARCIA DE GORORDO

IPC: H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/32192 ,  H01J37/32651

Abstract: Embodiments of the present invention generally relate to an apparatus for processing substrates having improved magnetic shielding. One embodiment of the present invention provides a plasma processing chamber having an RF match, a plasma source and a plasma region defined between a chamber ceiling and a substrate support. At least one of the RF match, plasma source and plasma region is shielded from any external magnetic field with a shielding material that has a relative magnetic permeability ranging from about 20,000 to about 200,000. As a result, the inherent process non-uniformities of the hardware may be reduced effectively without the overlaid non-uniformities from external factors such as earth's geomagnetic field.

Abstract translation: 本发明的实施例一般涉及用于处理具有改进的磁屏蔽的基板的设备。 本发明的一个实施例提供了一种具有RF匹配，等离子体源和限定在室顶板和衬底支架之间的等离子体区域的等离子体处理室。 RF匹配，等离子体源和等离子体区域中的至少一个屏蔽具有相对导磁率为约20,000至约200,000的屏蔽材料的任何外部磁场。 结果，可以有效地降低硬件的固有过程不均匀性，而不会受到诸如地球地磁场等外部因素的重叠的不均匀性的影响。

公开(公告)号：US20140367043A1

公开(公告)日：2014-12-18

申请号：US14287480

申请日：2014-05-27

Applicant: APPLIED MATERIALS, INC.

Inventor： WAHEB BISHARA ,  SAMER BANNA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01L21/3065

Abstract: Embodiments of the present invention include methods and apparatus for plasma processing in a process chamber using an RF power supply coupled to the process chamber via a matching network. In some embodiments, the method includes providing RF power to the process chamber by the RF power supply at a first frequency while the matching network is in a hold mode, adjusting the first frequency, using the RF power supply, to a second frequency during a first time period to ignite the plasma, adjusting the second frequency, using the RF power supply, to a known third frequency during a second time period while maintaining the plasma, and changing an operational mode of the matching network to an automatic tuning mode to reduce a reflected power of the RF power provided by the RF power supply.

Abstract translation: 本发明的实施例包括使用经由匹配网络耦合到处理室的RF电源的处理室中等离子体处理的方法和装置。 在一些实施例中，该方法包括在匹配网络处于保持模式的同时以RF第一频率向RF处理室提供RF功率，使用RF电源将第一频率调整到第二频率 第一时间段点燃等离子体，在维持等离子体的同时在第二时间段内将使用RF电源的第二频率调整到已知的第三频率，并且将匹配网络的操作模式改变为自动调谐模式以减少 由RF电源提供的RF功率的反射功率。

公开(公告)号：US20140209244A1

公开(公告)日：2014-07-31

申请号：US13833428

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  WAHEB BISHARA ,  ALVARO GARCIA de GORORDO ,  TZA-JING GUNG

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32651 ,  H01J37/3266 ,  H01J37/32669

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; one or more inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and one or more first electromagnets to form a first static magnetic field that is substantially vertical in direction and axisymmetric about a central processing axis of the process chamber, and having a magnitude of about 2 to about 10 gauss within the processing volume proximate the lid.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的电介质盖下方的内部处理容积; 设置在所述处理室中的基板支撑件; 设置在电介质盖上方的一个或多个感应线圈以将RF能量感应地耦合到衬底支撑件上方的处理容积中; 以及一个或多个第一电磁体，以形成第一静磁场，该第一静磁场在方向上基本上垂直并且围绕处理室的中心处理轴线轴对称，并且在接近盖的处理体积内具有约2至约10高斯的大小。