公开(公告)号：US20130105086A1

公开(公告)日：2013-05-02

申请号：US13657232

申请日：2012-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  WAHEB BISHARA ,  RYAN GIAR ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  KYLE R. TANTIWONG

IPC: H05H1/46 ,  B44C1/22 ,  H05H1/10

CPC classification number: H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

Abstract translation: 等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈 ，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽被配置为局部引导 由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位 线圈

公开(公告)号：US20130105085A1

公开(公告)日：2013-05-02

申请号：US13647574

申请日：2012-10-09

Applicant: Applied Materials, Inc.

Inventor： IMAD YOUSIF ,  MARTIN JEFFREY SALINAS ,  SAMER BANNA ,  ANDREW NGUYEN ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  ANKUR AGARWAL ,  KALLOL BERA

IPC: H01L21/20 ,  H01L21/306

CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

公开(公告)号：US20150087157A1

公开(公告)日：2015-03-26

申请号：US14491729

申请日：2014-09-19

Applicant: APPLIED MATERIALS, INC.

Inventor： JOSEPH F. AUBUCHON ,  TZA-JING GUNG ,  SAMER BANNA

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/3211 ,  H01J37/32669

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的电介质盖下方的内部处理容积; 设置在所述处理室中的基板支撑件; 设置在电介质盖上方的两个或更多个同心感应线圈将RF能量感应耦合到衬底支架上方的处理容积中; 以及设置在所述两个或更多个同心电感线圈的两个相邻同心电感线圈之间的电介质盖的顶表面附近的电磁偶极子。

公开(公告)号：US20190221463A1

公开(公告)日：2019-07-18

申请号：US16360187

申请日：2019-03-21

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H01J37/32 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

公开(公告)号：US20130155568A1

公开(公告)日：2013-06-20

申请号：US13651351

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在所述第一电极的所述第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

公开(公告)号：US20130107415A1

公开(公告)日：2013-05-02

申请号：US13646330

申请日：2012-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY

IPC: H02N13/00

CPC classification number: H01L21/6831 ,  H01J37/32715 ,  H02N13/00

Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and retaining a substrate having a given width may include a dielectric member having a support surface configured to support a substrate having a given width; an electrode disposed within the dielectric member beneath the support surface and extending from a center of the dielectric member outward to an area beyond an outer periphery of the substrate as defined by the given width of the substrate; an RF power source coupled to the electrode; and a DC power source coupled to the electrode.

Abstract translation: 本文提供了静电卡盘的实施例。 在一些实施例中，用于支撑和保持具有给定宽度的基底的静电卡盘可以包括电介质构件，其具有被配置为支撑具有给定宽度的基底的支撑表面; 电介质构件，其设置在所述电介质构件的所述支撑表面下方并且从所述电介质构件的中心向外延伸到由所述衬底的给定宽度限定的超过所述衬底的外周的区域; 耦合到所述电极的RF电源; 以及耦合到所述电极的直流电源。

公开(公告)号：US20150068682A1

公开(公告)日：2015-03-12

申请号：US14463205

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  TZA-JING GUNG ,  VLADIMIR KNYAZIK ,  KYLE TANTIWONG ,  DAN A. MAROHL ,  VALENTIN N. TODOROW ,  STEPHEN YUEN

IPC: H01J37/32

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Abstract translation: 本文提供电感耦合等离子体（ICP）反应器的实施例。 在一些实施例中，用于电感耦合等离子体反应器的电介质窗包括：主体，包括第一侧，与第一侧相对的第二侧，边缘和中心，其中介电窗口具有在空间上变化的介电系数。 在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的盖下方的处理容积; 以及设置在所述盖上方的一个或多个感应线圈，以将RF能量感应耦合并在处理体积中形成等离子体，所述等离子体位于设置在所述处理容积内的衬底支撑件上方; 其中所述盖是包括面向所述处理体积的第一侧和相对的第二侧的电介质窗，并且其中所述盖具有空间变化的介电系数，以提供来自所述一个或多个感应线圈的RF能量与所述一个或多个感应线圈的变化的功率耦合 处理量。

公开(公告)号：US20140367043A1

公开(公告)日：2014-12-18

申请号：US14287480

申请日：2014-05-27

Applicant: APPLIED MATERIALS, INC.

Inventor： WAHEB BISHARA ,  SAMER BANNA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01L21/3065

Abstract: Embodiments of the present invention include methods and apparatus for plasma processing in a process chamber using an RF power supply coupled to the process chamber via a matching network. In some embodiments, the method includes providing RF power to the process chamber by the RF power supply at a first frequency while the matching network is in a hold mode, adjusting the first frequency, using the RF power supply, to a second frequency during a first time period to ignite the plasma, adjusting the second frequency, using the RF power supply, to a known third frequency during a second time period while maintaining the plasma, and changing an operational mode of the matching network to an automatic tuning mode to reduce a reflected power of the RF power provided by the RF power supply.

Abstract translation: 本发明的实施例包括使用经由匹配网络耦合到处理室的RF电源的处理室中等离子体处理的方法和装置。 在一些实施例中，该方法包括在匹配网络处于保持模式的同时以RF第一频率向RF处理室提供RF功率，使用RF电源将第一频率调整到第二频率 第一时间段点燃等离子体，在维持等离子体的同时在第二时间段内将使用RF电源的第二频率调整到已知的第三频率，并且将匹配网络的操作模式改变为自动调谐模式以减少 由RF电源提供的RF功率的反射功率。

公开(公告)号：US20140209244A1

公开(公告)日：2014-07-31

申请号：US13833428

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  WAHEB BISHARA ,  ALVARO GARCIA de GORORDO ,  TZA-JING GUNG

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32651 ,  H01J37/3266 ,  H01J37/32669

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; one or more inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and one or more first electromagnets to form a first static magnetic field that is substantially vertical in direction and axisymmetric about a central processing axis of the process chamber, and having a magnitude of about 2 to about 10 gauss within the processing volume proximate the lid.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的电介质盖下方的内部处理容积; 设置在所述处理室中的基板支撑件; 设置在电介质盖上方的一个或多个感应线圈以将RF能量感应地耦合到衬底支撑件上方的处理容积中; 以及一个或多个第一电磁体，以形成第一静磁场，该第一静磁场在方向上基本上垂直并且围绕处理室的中心处理轴线轴对称，并且在接近盖的处理体积内具有约2至约10高斯的大小。

公开(公告)号：US20130134129A1

公开(公告)日：2013-05-30

申请号：US13751229

申请日：2013-01-28

Applicant: Applied Materials, Inc.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: C23C16/505 ,  B44C1/22

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。