公开(公告)号：US20030071015A1

公开(公告)日：2003-04-17

申请号：US10265598

申请日：2002-10-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Sofiane Soukane

IPC: C03C015/00

CPC classification number: B81C1/00928 ,  B81C2201/112 ,  G02B6/122 ,  G02B6/3692 ,  G02B2006/12176

Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

Abstract translation: 公开了一种从基板释放微机电装置的两步法。 第一步包括用夹杂在两个含硅层之间的氧化硅层与氟化氢 - 水气体混合物进行各向同性蚀刻，所述上层硅层将从底层硅层或衬底分离足以形成开口但不 以释放上覆层，第二步骤包括加入干燥剂以代替残留在开口中的水分，并溶解开口中可能导致静电的残留物。