公开(公告)号：US20190276926A1

公开(公告)日：2019-09-12

申请号：US16295328

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  Keith Miller ,  Sree Rangasai Kesapragada ,  Sudarsan Srinivasan

IPC: C23C14/04 ,  H01L21/02 ,  H01L21/285 ,  C23C14/34

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

公开(公告)号：US10815561B2

公开(公告)日：2020-10-27

申请号：US16295328

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  Keith Miller ,  Sree Rangasai Kesapragada ,  Sudarsan Srinivasan

IPC: C23C14/04 ,  C23C14/34 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

公开(公告)号：US20190287772A1

公开(公告)日：2019-09-19

申请号：US16351651

申请日：2019-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： JOUNG JOO LEE ,  Bencherki Mebarki ,  Xianmin Tang ,  KEITH MILLER ,  SREE RANGASAI KESAPRAGADA ,  Sudarsan Srinivasan

IPC: H01J37/34 ,  C23C14/54 ,  H01L21/02

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.