公开(公告)号：US20190353919A1

公开(公告)日：2019-11-21

申请号：US16414975

申请日：2019-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  FARZAD HOUSHMAND ,  ANANTHA SUBRAMANI ,  KEITH MILLER ,  XIANMIN TANG ,  PRASHANTH KOTHNUR

IPC: G02B27/30 ,  H01J37/34

Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

公开(公告)号：US20190287772A1

公开(公告)日：2019-09-19

申请号：US16351651

申请日：2019-03-13

Applicant: APPLIED MATERIALS, INC.

Inventor： JOUNG JOO LEE ,  Bencherki Mebarki ,  Xianmin Tang ,  KEITH MILLER ,  SREE RANGASAI KESAPRAGADA ,  Sudarsan Srinivasan

IPC: H01J37/34 ,  C23C14/54 ,  H01L21/02

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.