公开(公告)号：US20210332476A1

公开(公告)日：2021-10-28

申请号：US17113301

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US20240192040A1

公开(公告)日：2024-06-13

申请号：US18532190

申请日：2023-12-07

Applicant: ASM IP Holding B.V

Inventor： Panagiota Arnou ,  Tom Van Kesteren ,  Mehmet Orhan Tas ,  Gido Van Der Star

IPC: G01F15/075 ,  C23C16/455 ,  C23C16/52

CPC classification number: G01F15/0755 ,  C23C16/45544 ,  C23C16/52

Abstract: In general the various aspects of the technology of the present disclosure relate to semiconductor processing, and particularly to monitoring the amount of chemicals consumed by a semiconductor manufacturing process.

公开(公告)号：US20240150892A1

公开(公告)日：2024-05-09

申请号：US18404983

申请日：2024-01-05

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US11898243B2

公开(公告)日：2024-02-13

申请号：US17113301

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04

CPC classification number: C23C16/34 ,  C23C16/04 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/56 ,  H01L21/28568

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.