公开(公告)号：US20250079161A1

公开(公告)日：2025-03-06

申请号：US18816095

申请日：2024-08-27

Applicant: ASM IP Holding B.V.

Inventor： Adam Vianna ,  Krzysztof Kamil Kachel ,  Anirudhan Chandrasekaran ,  Yi Cheng Zhang

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455

Abstract: In one aspect, a method, system and apparatus are disclosed for selectively depositing a layer of organic material on a substrate including a first surface and a second surface by a cyclic deposition process, the process includes providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber, where the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and where the first vapor-phase precursor includes a diamine or triamine compound.

公开(公告)号：US20250109491A1

公开(公告)日：2025-04-03

申请号：US18900571

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Marko Tuominen ,  Saima Ali ,  Bhagyesh Purohit ,  Eva E. Tois ,  Kizysztof Kamil Kachel ,  Adam Vianna ,  Vincent Vandalon ,  Charles Dezelah

IPC: C23C16/04

Abstract: The disclosure relates to methods, processing assemblies, reactants and vapor deposition vessels for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising a silicon atom bonded to an oxygen atom and to a second atom selected from nitrogen and halogens.

公开(公告)号：US20250092509A1

公开(公告)日：2025-03-20

申请号：US18889069

申请日：2024-09-18

Applicant: ASM IP Holding B.V.

Inventor： Bhagyesh Purohit ,  Saima Alli ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Vincent Vandalon ,  Adam Vianna ,  Krzysztof Kamil Kachel ,  Eric James Shero ,  Yi Cheng Zhang ,  Anirudhan Chandrasekaran

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: The disclosure relates to methods and processing assemblies for selectively depositing organic polymer material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process is disclosed. The method comprises providing a substrate in a reaction chamber, providing a first vapor-phase organic reactant into the reaction chamber and providing a second vapor-phase organic reactant into the reaction chamber. In the method, the first and second vapor-phase organic reactants form the organic polymer material selectively on the first surface; and the first vapor-phase reactant comprises a cyclic compound comprising at least two primary amine groups.