公开(公告)号：US12183546B2

公开(公告)日：2024-12-31

申请号：US17196374

申请日：2021-03-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  C23C16/505

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US11414760B2

公开(公告)日：2022-08-16

申请号：US16588807

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US20220349058A1

公开(公告)日：2022-11-03

申请号：US17864698

申请日：2022-07-14

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US11274369B2

公开(公告)日：2022-03-15

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

公开(公告)号：US20250087460A1

公开(公告)日：2025-03-13

申请号：US18958281

申请日：2024-11-25

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  C23C16/505

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US20210287878A1

公开(公告)日：2021-09-16

申请号：US17196374

申请日：2021-03-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  H03F3/21 ,  H03K5/24 ,  H01P5/16 ,  C23C16/505 ,  C23C16/458

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US20200080200A1

公开(公告)日：2020-03-12

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.