公开(公告)号：US11274369B2

公开(公告)日：2022-03-15

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

公开(公告)号：US20230092185A1

公开(公告)日：2023-03-23

申请号：US17941211

申请日：2022-09-09

Applicant: ASM IP Holding B.V.

Inventor： DongHyun Ko ,  HakJoon Lee ,  SungKyu Kang

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: In one embodiment, a particle with a first particle thickness may be formed on a film with a first thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. In another embodiment, a particle with a first particle thickness may be formed on a first film with a first film thickness, followed by a plasma treatment. The first particle thickness may be reduced to a second particle thickness below an allowable limit and the first film thickness may be reduced to a second film thickness by the plasma treatment. After the plasma treatment, a second film with a third film thickness may be deposited on the first film and the particle may be buried in the second film.

公开(公告)号：US20220310387A1

公开(公告)日：2022-09-29

申请号：US17701433

申请日：2022-03-22

Applicant: ASM IP Holding B.V.

Inventor： WanGyu Lim ,  HeeSung Kang ,  JaeOk Ko ,  JaeBin Ahn ,  Sunja Kim ,  YoungJae Kim ,  DongHyun Ko

IPC: H01L21/02 ,  H01L21/764

Abstract: A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.

公开(公告)号：US20230110980A1

公开(公告)日：2023-04-13

申请号：US17962859

申请日：2022-10-10

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  KyungEun Lee ,  HakJoon Lee ,  YoonKi Min ,  HaRim Kim ,  DongHyun Ko ,  Seongil Cho

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/505

Abstract: A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second step portion; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US20200080200A1

公开(公告)日：2020-03-12

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.