公开(公告)号：US20240339359A1

公开(公告)日：2024-10-10

申请号：US18626758

申请日：2024-04-04

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Jihee Jeon ,  YongMin Yoo ,  Andrey Sokolov ,  Maarten Stokhof ,  Steven Van Aerde ,  Dieter Pierreux ,  Hussein Mehdi

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02274

Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.