公开(公告)号：US11414760B2

公开(公告)日：2022-08-16

申请号：US16588807

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US20200080200A1

公开(公告)日：2020-03-12

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

公开(公告)号：US20220349058A1

公开(公告)日：2022-11-03

申请号：US17864698

申请日：2022-07-14

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US11274369B2

公开(公告)日：2022-03-15

申请号：US16565460

申请日：2019-09-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han ,  TaeHee Yoo ,  WanGyu Lim ,  DongHyun Ko

IPC: C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.