公开(公告)号：US20240274313A1

公开(公告)日：2024-08-15

申请号：US18431164

申请日：2024-02-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Steaphan Wallace ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G21K1/06 ,  G03F7/00 ,  G03F7/11 ,  H01J37/32

CPC classification number: G21K1/06 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/70033 ,  G03F7/7075 ,  H01J37/32146 ,  H01J2237/332

Abstract: Structures, related methods, and related systems for reducing EUV dose. A structure as described herein can comprise a substrate; an electron reflector layer overlying the substrate; and, an extreme ultraviolet (EUV) resist overlying an electron generation layer. The EUV resist is constructed and arranged for absorbing EUV radiation and generating secondary electrons. The electron reflector layer is constructed and arranged for reflecting secondary electrons generated by the EUV resist back towards the EUV resist.