公开(公告)号：US20240274313A1

公开(公告)日：2024-08-15

申请号：US18431164

申请日：2024-02-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Steaphan Wallace ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G21K1/06 ,  G03F7/00 ,  G03F7/11 ,  H01J37/32

CPC classification number: G21K1/06 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/70033 ,  G03F7/7075 ,  H01J37/32146 ,  H01J2237/332

Abstract: Structures, related methods, and related systems for reducing EUV dose. A structure as described herein can comprise a substrate; an electron reflector layer overlying the substrate; and, an extreme ultraviolet (EUV) resist overlying an electron generation layer. The EUV resist is constructed and arranged for absorbing EUV radiation and generating secondary electrons. The electron reflector layer is constructed and arranged for reflecting secondary electrons generated by the EUV resist back towards the EUV resist.

公开(公告)号：US20240302748A1

公开(公告)日：2024-09-12

申请号：US18595105

申请日：2024-03-04

Applicant: ASM IP Holding B.V.

Inventor： João Antunes Afonso ,  Steaphan Mark Wallace ,  Paul Chatelain ,  Kishan Ashokbhai Patel ,  Fatemeh Davodi

IPC: G03F7/11 ,  G03F7/00

CPC classification number: G03F7/11 ,  G03F7/0035 ,  G03F7/70033 ,  G03F7/70041 ,  G03F7/70933

Abstract: The disclosure generally relates to the field of semiconductor substrate processing technology, and more particularly to methods for depositing layers of materials on substrates, to structures formed accordingly, and for systems for executing such methods and for forming such structures. Aspects relate to a layer deposition process comprising the steps of forming an extreme ultraviolet (EUV) photoresist underlayer on a surface of a substrate; providing a substrate within a reactor chamber; providing a precursor comprising Sn and/or In to the reactor chamber thereby adsorbing the precursor on the surface of the substrate; and forming an EUV photoresist underlayer on the surface of the substrate within the reactor chamber by exposing the precursor adsorbed on the surface to a plasma, wherein the plasma comprises H2 as reactant and a noble gas as carrier gas.

公开(公告)号：US20250085639A1

公开(公告)日：2025-03-13

申请号：US18825635

申请日：2024-09-05

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi

IPC: G03F7/00

Abstract: Lithographical systems and methods. Embodiments of methods disclosed herein comprise exposing a substrate to an electric field while exposing the substrate to electromagnetic radiation. Thus, dose reduction can be obtained.

公开(公告)号：US20250079155A1

公开(公告)日：2025-03-06

申请号：US18814784

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  David Kurt de Roest

IPC: H01L21/02

Abstract: Methods, systems, and structures for lithography, in particular EUV lithography. Embodiments of structures disclosed herein comprise a hafnium oxide secondary electron generation layer which can advantageously reduce the dose requirement to fully develop EUV resist.

公开(公告)号：US20250046609A1

公开(公告)日：2025-02-06

申请号：US18792784

申请日：2024-08-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Paul Chatelain ,  Charles Dezelah

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/503 ,  G03F7/20 ,  H01L21/033

Abstract: Methods and related systems and structures for reducing EUV dose requirements during lithography steps. Presently disclosed methods can comprise forming a dose reducing layer that comprises a doped semiconductor. The doped semiconductor can comprise at least one of an elemental semiconductor and a compound semiconductor.