公开(公告)号：US20210311400A1

公开(公告)日：2021-10-07

申请号：US17264023

申请日：2019-07-03

Applicant: ASML NETHERLANDS B,V.

Inventor： Mohammad Reza KAMALI ,  Brennad PETERSON

IPC: G03F7/20

Abstract: A method for controlling a manufacturing process for manufacturing semiconductor devices, the method including: obtaining performance data indicative of the performance of the manufacturing process, the performance data including values for a performance parameter across a substrate subject to the manufacturing process; and determining a process correction for the manufacturing process based on the performance data and at least one control characteristic related to a dynamic behavior of one or more control parameters of the manufacturing process, wherein the determining is further based on an expected stability of the manufacturing process when applying the process correction.

公开(公告)号：US20230297757A1

公开(公告)日：2023-09-21

申请号：US18018261

申请日：2021-08-26

Applicant: ASML NETHERLANDS B. V.

Inventor： Syam PARAYIL VENUGOPALAN ,  Mohammad Reza KAMALI ,  MIchael KUBIS

IPC: G06F30/398 ,  H01J37/32

CPC classification number: G06F30/398 ,  H01J37/32926 ,  H01J2237/334

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.