公开(公告)号：US20230297757A1

公开(公告)日：2023-09-21

申请号：US18018261

申请日：2021-08-26

Applicant: ASML NETHERLANDS B. V.

Inventor： Syam PARAYIL VENUGOPALAN ,  Mohammad Reza KAMALI ,  MIchael KUBIS

IPC: G06F30/398 ,  H01J37/32

CPC classification number: G06F30/398 ,  H01J37/32926 ,  H01J2237/334

Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.