公开(公告)号：US20240363383A1

公开(公告)日：2024-10-31

申请号：US18621553

申请日：2024-03-29

申请人： Samsung Electronics Co., Ltd.

发明人： Junhyung KIM ,  Hyunjoo JEON

IPC分类号： H01L21/683 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

摘要： An electrostatic chuck comprising; an electrostatic chuck body configured to have a step protruding from a lower end thereof in a radial direction, an adhesive layer on an upper surface of the electrostatic chuck body, a ceramic puck configured to be adhered to the adhesive layer and configured to have an edge protruding from the upper surface of the electrostatic chuck body, and a sealing member on a lower portion of an edge of the ceramic puck. The electrostatic chuck body is provided with an installation portion configured to have an inclined surface, and the sealing member is configured to be in contact with the inclined surface.

公开(公告)号：US12131936B2

公开(公告)日：2024-10-29

申请号：US17394359

申请日：2021-08-04

申请人： KABUSHIKI KAISHA YASKAWA DENKI

发明人： Keisuke Yoshino ,  Tatsuyuki Urata

IPC分类号： H01L21/68 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/681 ,  H01J37/32642 ,  H01J37/32733 ,  H01L21/67259 ,  H01L21/68707 ,  H01L21/6875 ,  H01J2237/334 ,  H01L21/68

摘要： An alignment apparatus includes a rotational support configured to rotate around a central axis, a rotation actuator, an edge sensor, and control circuitry. The rotational support includes substrate supports configured to concurrently support a substrate, and ring supports configured to concurrently support a focus ring. The rotation actuator is configured to rotate the rotational support around the central axis. The edge sensor is configured to generate an edge signal that changes in accordance with each of an edge position of the substrate and an edge position of the focus ring. The control circuitry is configured to control the rotation actuator to adjust a posture of the substrate to a first target posture based on the edge signal, and to control the rotation actuator to adjust a posture of the focus ring to a second target posture based on the edge signal.

公开(公告)号：US12131892B2

公开(公告)日：2024-10-29

申请号：US17643405

申请日：2021-12-08

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Feng-Ju Tsai ,  Shyue-Ru Doong

IPC分类号： H01L21/67 ,  B08B5/02 ,  B08B5/04 ,  B08B9/032 ,  B08B9/035 ,  B08B15/00 ,  G03F7/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01J37/32862 ,  B08B5/02 ,  B08B5/04 ,  B08B9/0328 ,  B08B9/035 ,  B08B15/00 ,  G03F7/70933 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/31138 ,  H01L21/67069 ,  H01J37/3211 ,  H01J2237/334

摘要： A method includes the following steps. A wafer is disposed on a wafer-mounting surface of a wafer holder that is disposed in a chamber. The wafer-mounting surface is in parallel with a gravity direction. A gas is flown from a gas source to vacuum sealing device. An inductive coil wrapping around a vacuum sealing device excites the gas into plasma. The plasma is injected to the wafer.

公开(公告)号：US12131888B2

公开(公告)日：2024-10-29

申请号：US17008314

申请日：2020-08-31

申请人： Tokyo Electron Limited

发明人： Peter Ventzek ,  Alok Ranjan

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01J2237/334

摘要： A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

申请人： Lam Research Corporation

发明人： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC分类号： C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC分类号： C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

摘要： A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US20240355636A1

公开(公告)日：2024-10-24

申请号：US18764079

申请日：2024-07-03

申请人： Lam Research Corporation

发明人： Juline Shoeb ,  Alexander Paterson

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30

CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/3003 ,  H01L21/31105 ,  H01L21/31111 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

摘要： A system is provided, including the following: a process chamber, the process chamber configured to receive a substrate for processing, a surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; a deuterium source for supplying a deuterium gas into the process chamber; an RF coil for inductively coupling power into the deuterium gas in the process chamber, to generate a deuterium plasma, wherein the deuterium plasma is configured to generate energetic deuterium atoms; wherein the deuterium plasma is applied to the surface of the substrate, wherein the energetic deuterium atoms of the deuterium plasma are configured to selectively etch the region of silicon oxide, to the exclusion of the underlying silicon layer.

公开(公告)号：US20240355597A1

公开(公告)日：2024-10-24

申请号：US18682869

申请日：2022-08-19

申请人： Lam Research Corporation

发明人： Chih-Yang CHANG ,  Raphael CASAES ,  Seokmin YUN ,  Shih-Yuan CHENG ,  Chih-Min LIN ,  Shuogang HUANG ,  Anurag Kumar MISHRA

IPC分类号： H01J37/32 ,  H01L21/3213

CPC分类号： H01J37/32862 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32926 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/32136

摘要： An apparatus for ion beam etching is provided. An ion extractor separates a plasma source chamber from a process chamber. A gas inlet provides gas to the plasma source chamber. An RF power system provides RF power to the plasma source chamber. A process gas source and cleaning gas mixture source are connected to the gas inlet.

公开(公告)号：US12125698B2

公开(公告)日：2024-10-22

申请号：US17516326

申请日：2021-11-01

申请人： Applied Materials, Inc.

发明人： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC分类号： H01L21/02 ,  B08B7/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02049 ,  B08B7/0035 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/02315 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/32136 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68742 ,  H01J2237/334 ,  H01J2237/335

摘要： Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US12125689B2

公开(公告)日：2024-10-22

申请号：US17940513

申请日：2022-09-08

申请人： Applied Materials, Inc.

发明人： Kartik Ramaswamy ,  Andrew Nguyen ,  Yang Yang ,  Sathya Ganta ,  Fernando Silveira ,  Yue Guo ,  Lu Liu

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

摘要： Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.

公开(公告)号：US12125664B2

公开(公告)日：2024-10-22

申请号：US17575429

申请日：2022-01-13

申请人： Oxford Instruments Nanotechnology Tools Limited

发明人： David Pearson ,  Sebastien Pochon ,  Joao Ferreira

IPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/32

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/32422 ,  H01J2237/083 ,  H01J2237/334

摘要： A charged particle beam source for a surface processing apparatus is disclosed. The charged particle beam source comprises: a plasma chamber; a plasma generation unit adapted to convert an input gas within the plasma chamber into a plasma containing charged particles; and a grid assembly adjacent an opening of the plasma chamber. The grid assembly comprises one or more grids each having a plurality of apertures therethrough, the one or more grids being electrically biased in use so as to accelerate charged particles from the plasma through the grid(s) to thereby output a charged particle beam, the major axis of which is substantially perpendicular to the plane of the grid assembly. The transmissivity of the or each grid to the charged particles is defined by the relative proportion of aperture area to non-aperture area, and at least one of the grids has a transmissivity which varies across the grid along a first direction, the transmissivity being lower adjacent a first extremity of the grid than adjacent a second extremity of the grid opposite the first extremity, the first direction lying parallel to the plane of the grid assembly, such that in use the charged particle beam output by the source has a non-uniform charged particle current density profile in a plane parallel to the plane of the grid assembly which varies along the first direction, the charged particle current density being lower adjacent a first edge of the beam than adjacent a second edge of the beam opposite the first edge.