公开(公告)号：US20170255112A1

公开(公告)日：2017-09-07

申请号：US15445612

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard McNAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER ,  Maria Isabel DE LA FUENTE VALENTIN ,  Koen VAN WITTEVEEN ,  Martijn Maria ZAAL ,  Shu-jin WANG

IPC: G03F9/00 ,  G01B3/14

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

公开(公告)号：US20210035871A1

公开(公告)日：2021-02-04

申请号：US17072391

申请日：2020-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard Mc NAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER ,  Maria Isabel DE LA FUENTE VALENTIN ,  Koen VAN WITTEVEEN ,  Martijn Maria ZAAL ,  Shu-jin WANG

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.