公开(公告)号：US11086229B2

公开(公告)日：2021-08-10

申请号：US16497826

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US10895811B2

公开(公告)日：2021-01-19

申请号：US16599215

申请日：2019-10-11

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Elliott Gerard Mc Namara ,  Pierre-Yves Jerome Yvan Guittet ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers

IPC: G03F7/20

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

公开(公告)号：US11714357B2

公开(公告)日：2023-08-01

申请号：US17363057

申请日：2021-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/705 ,  G03F7/70658

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US11385554B2

公开(公告)日：2022-07-12

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Steven Erik Steen ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers ,  Pierre-Yves Jerome Yvan Guittet ,  Frank Staals ,  Paulus Jacobus Maria Van Adrichem

IPC: G03F7/20 ,  G03F1/44 ,  G03F1/84

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.