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公开(公告)号：US09903823B2
公开(公告)日：2018-02-27
申请号：US14945257
申请日：2015-11-18
发明人： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC分类号： G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
摘要： A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
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公开(公告)号：US12055904B2
公开(公告)日：2024-08-06
申请号：US17293373
申请日：2019-10-30
发明人： Youping Zhang , Boris Menchtchikov , Cyrus Emil Tabery , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxime Philippe Frederic Genin
IPC分类号： G06F30/10 , G03F7/00 , G05B13/02 , G05B13/04 , G06F30/27 , G06N3/045 , G06N3/08 , G06F119/02 , G06F119/22
CPC分类号： G05B13/048 , G03F7/705 , G03F7/70616 , G03F7/706837 , G05B13/027 , G05B13/042 , G06F30/10 , G06F30/27 , G06N3/045 , G06N3/08 , G06F2119/02 , G06F2119/22
摘要： A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.
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3.发明授权公开(公告)号：US11803127B2
公开(公告)日：2023-10-31
申请号：US17295193
申请日：2019-11-04
发明人： Chenxi Lin , Cyrus Emil Tabery , Hakki Ergün Cekli , Simon Philip Spencer Hastings , Boris Menchtchikov , Yi Zou , Yana Cheng , Maxime Philippe Frederic Genin , Tzu-Chao Chen , Davit Harutyunyan , Youping Zhang
IPC分类号： G03F7/00 , G05B13/02 , G05B19/418 , H01L21/66
CPC分类号： G03F7/705 , G05B13/027 , G05B19/41875 , H01L22/20 , G05B2219/32193 , G05B2219/32368 , G05B2219/45031
摘要： A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
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公开(公告)号：US11086229B2
公开(公告)日：2021-08-10
申请号：US16497826
申请日：2018-03-29
发明人： Alexander Ypma , Cyrus Emil Tabery , Simon Hendrik Celine Van Gorp , Chenxi Lin , Dag Sonntag , Hakki Ergün Cekli , Ruben Alvarez Sanchez , Shih-Chin Liu , Simon Philip Spencer Hastings , Boris Menchtchikov , Christiaan Theodoor De Ruiter , Peter Ten Berge , Michael James Lercel , Wei Duan , Pierre-Yves Jerome Yvan Guittet
IPC分类号： G03F7/20
摘要： A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
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公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
发明人： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
摘要： A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20160146740A1
公开(公告)日：2016-05-26
申请号：US14945257
申请日：2015-11-18
发明人： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC分类号： G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
摘要： A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
摘要翻译： 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。
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7.发明申请LITHOGRAPHIC CLUSTER SYSTEM, METHOD FOR CALIBRATING A POSITIONING DEVICE OF A LITHOGRAPHIC APPARATUS 有权光刻集群系统，用于校正光刻设备的定位装置的方法公开(公告)号：US20150153657A1
公开(公告)日：2015-06-04
申请号：US14413394
申请日：2013-06-14
发明人： Alexander Alexandrovich Danilin , Boris Menchtchikov , Alexander Viktorovych Padiy , Alejandro Xabier Arrizabalaga Uriarte
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70516 , G03F7/70725
摘要： A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.
摘要翻译： 一种校准光刻设备的衬底定位系统的方法，所述方法包括：将具有光刻设备的图案暴露在具有参考层的衬底的表面上的暴露层上，其中该图案对应于衬底的移动 基板定位系统; 在所述衬底上的多个位置上测量所述暴露层和所述参考层之间的覆盖数据; 通过离散余弦变换将覆盖数据从空间域变换到频域; 通过选择覆盖数据的子集来修改频域中的覆盖数据; 通过反相离散余弦变换将经修改的覆盖数据从频域转换回空间域; 通过使用空间域中的修改的覆盖数据来校准衬底定位系统。
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公开(公告)号：US11947266B2
公开(公告)日：2024-04-02
申请号：US17297171
申请日：2019-11-14
发明人： Nicolaas Petrus Marcus Brantjes , Matthijs Cox , Boris Menchtchikov , Cyrus Emil Tabery , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxim Philippe Frederic Genin
CPC分类号： G03F7/70491 , G03F7/70633 , G03F9/7046
摘要： A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
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公开(公告)号：US11714357B2
公开(公告)日：2023-08-01
申请号：US17363057
申请日：2021-06-30
发明人： Alexander Ypma , Cyrus Emil Tabery , Simon Hendrik Celine Van Gorp , Chenxi Lin , Dag Sonntag , Hakki Ergün Cekli , Ruben Alvarez Sanchez , Shih-Chin Liu , Simon Philip Spencer Hastings , Boris Menchtchikov , Christiaan Theodoor De Ruiter , Peter Ten Berge , Michael James Lercel , Wei Duan , Pierre-Yves Jerome Yvan Guittet
CPC分类号： G03F7/70491 , G03F7/705 , G03F7/70658
摘要： A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
发明人： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
摘要： A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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