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公开(公告)号：US12169366B2
公开(公告)日：2024-12-17
申请号：US16772022
申请日：2018-12-07
Applicant: ASML Netherlands B.V.
Inventor： Cyrus Emil Tabery , Simon Hendrik Celine Van Gorp , Simon Philip Spencer Hastings , Brennan Peterson
IPC: G03F7/00 , H01L21/66 , H01L23/544
Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.
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公开(公告)号：US12044980B2
公开(公告)日：2024-07-23
申请号：US17296316
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham Slachter , Wim Tjibbo Tel , Daan Maurits Slotboom , Vadim Yourievich Timoshkov , Koen Wilhelmus Cornelis Adrianus Van Der Straten , Boris Menchtchikov , Simon Philip Spencer Hastings , Cyrus Emil Tabery , Maxime Philippe Frederic Genin , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng
IPC: G05B19/418 , G03F7/00
CPC classification number: G03F7/70625 , G03F7/70616 , G05B19/4188 , G03F7/70525
Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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公开(公告)号：US10598483B2
公开(公告)日：2020-03-24
申请号：US15683010
申请日：2017-08-22
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
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4.发明申请公开(公告)号：US20200064744A1
公开(公告)日：2020-02-27
申请号：US16669317
申请日：2019-10-30
Applicant: ASML Netherlands B.V.
Inventor： Patrick WARNAAR , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy MACHT
IPC: G03F7/20
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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公开(公告)号：US11947266B2
公开(公告)日：2024-04-02
申请号：US17297171
申请日：2019-11-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Nicolaas Petrus Marcus Brantjes , Matthijs Cox , Boris Menchtchikov , Cyrus Emil Tabery , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxim Philippe Frederic Genin
CPC classification number: G03F7/70491 , G03F7/70633 , G03F9/7046
Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
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Patent Agency Ranking
公开(公告)号：US11714357B2
公开(公告)日：2023-08-01
申请号：US17363057
申请日：2021-06-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , Cyrus Emil Tabery , Simon Hendrik Celine Van Gorp , Chenxi Lin , Dag Sonntag , Hakki Ergün Cekli , Ruben Alvarez Sanchez , Shih-Chin Liu , Simon Philip Spencer Hastings , Boris Menchtchikov , Christiaan Theodoor De Ruiter , Peter Ten Berge , Michael James Lercel , Wei Duan , Pierre-Yves Jerome Yvan Guittet
CPC classification number: G03F7/70491 , G03F7/705 , G03F7/70658
Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
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公开(公告)号：US20180073866A1
公开(公告)日：2018-03-15
申请号：US15683010
申请日：2017-08-22
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
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公开(公告)号：US11754931B2
公开(公告)日：2023-09-12
申请号：US17603870
申请日：2020-03-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Roy Werkman , David Frans Simon Deckers , Simon Philip Spencer Hastings , Jeffrey Thomas Ziebarth , Samee Ur Rehman , Davit Harutyunyan , Chenxi Lin , Yana Cheng
CPC classification number: G03F7/705 , G03F1/36 , G03F7/70508 , G03F7/70616
Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.
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公开(公告)号：US11022892B2
公开(公告)日：2021-06-01
申请号：US16669317
申请日：2019-10-30
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy Macht
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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10.发明授权公开(公告)号：US10466594B2
公开(公告)日：2019-11-05
申请号：US15438364
申请日：2017-02-21
Applicant: ASML Netherlands B.V.
Inventor： Patrick Warnaar , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy Macht
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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