公开(公告)号：US20140208278A1

公开(公告)日：2014-07-24

申请号：US14246961

申请日：2014-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Jun YE ,  Ronaldus Johannes Gljsbertus GOOSSENS

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.

Abstract translation: 本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。 根据一些方面，本发明的模式选择算法可以应用于任何现有的候选测试模式池。 根据一些方面，与设计最佳图案相反，本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。 根据另外的方面，根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学，确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值 实现了模型公式对预测精度的上限。