公开(公告)号：US20140351772A1

公开(公告)日：2014-11-27

申请号：US14456462

申请日：2014-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Taihui LIU ,  Been-Der CHEN ,  Yen-Wen LU

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/50

Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

Abstract translation: 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。