公开(公告)号：US20230044490A1

公开(公告)日：2023-02-09

申请号：US17782741

申请日：2020-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Tatung CHOW ,  Been-Der CHEN ,  Yen-Wen LU

IPC: G03F1/70 ,  G06N3/08 ,  G06N3/04

Abstract: A method of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning a portion of a design layout including the target pattern into a plurality of cells with reference to a given location on the target pattern; assigning a plurality of variables within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining, based on values of the plurality of variables, the mask pattern for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.

公开(公告)号：US20200380362A1

公开(公告)日：2020-12-03

申请号：US16970648

申请日：2019-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Ya LUO ,  Yen-Wen LU ,  Been-Der CHEN ,  Rafael C. HOWELL ,  Yi ZOU ,  Jing SU ,  Dezheng SUN

IPC: G06N3/08 ,  G06N3/04

Abstract: Methods of training machine learning models related to a patterning process, including a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.

公开(公告)号：US20200050099A1

公开(公告)日：2020-02-13

申请号：US16606791

申请日：2018-05-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing SU ,  Yi ZOU ,  Chenxi LIN ,  Yu CAO ,  Yen-Wen LU ,  Been-Der CHEN ,  Quan ZHANG ,  Stanislas Hugo Louis BARON ,  Ya LUO

IPC: G03F1/36 ,  G06F17/50 ,  G06N20/10 ,  G05B19/4097 ,  G06K9/46 ,  G06T7/60 ,  G06T7/00

Abstract: A method including: obtaining a portion of a design layout; determining characteristics of assist features based on the portion or characteristics of the portion; and training a machine learning model using training data including a sample whose feature vector includes the characteristics of the portion and whose label includes the characteristics of the assist features. The machine learning model may be used to determine characteristics of assist features of any portion of a design layout, even if that portion is not part of the training data.

公开(公告)号：US20140351772A1

公开(公告)日：2014-11-27

申请号：US14456462

申请日：2014-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Taihui LIU ,  Been-Der CHEN ,  Yen-Wen LU

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/50

Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

Abstract translation: 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。

公开(公告)号：US20240370621A1

公开(公告)日：2024-11-07

申请号：US18686994

申请日：2022-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Meng LIU ,  Been-Der CHEN ,  Debao SHAO ,  Jen-Yi WUU ,  Hao CHEN ,  Ayman HAMOUDA ,  Jianhua CHENG

IPC: G06F30/392 ,  G06F111/20

Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.

公开(公告)号：US20240119582A1

公开(公告)日：2024-04-11

申请号：US18276018

申请日：2022-01-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Been-Der CHEN ,  Wei-chun Fong ,  Zhangnan ZHU ,  Robert Elliott BOONE

IPC: G06T7/00 ,  G03F1/36

CPC classification number: G06T7/001 ,  G03F1/36 ,  G06T2207/20081 ,  G06T2207/20212 ,  G06T2207/30148

Abstract: Described are embodiments for generating a post-optical proximity correction (OPC) result for a mask using a target pattern and reference layer patterns. Images of the target pattern and reference layers are provided as an input to a machine learning (ML) model to generate a post-OPC image. The images may be input separately or combined into a composite image (e.g., using a linear function) and input to the ML model. The images are rendered from pattern data. For example, a target pattern image is rendered from a target pattern to be printed on a substrate, and a reference layer image such as dummy pattern image is rendered from dummy pattern. The ML model is trained to generate the post-OPC image using multiple images associated with target patterns and reference layers, and using a reference post-OPC image of the target pattern. The post-OPC image may be used to generate a post-OPC mask.

公开(公告)号：US20220100079A1

公开(公告)日：2022-03-31

申请号：US17418102

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan ZHANG ,  Yong-Ju CHO ,  Zhangnan ZHU ,  Boyang HUANG ,  Been-Der CHEN

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20

Abstract: A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.