公开(公告)号：US11972922B2

公开(公告)日：2024-04-30

申请号：US18126322

申请日：2023-03-24

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US11646174B2

公开(公告)日：2023-05-09

申请号：US16730848

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US11796920B2

公开(公告)日：2023-10-24

申请号：US17797506

申请日：2021-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Hermanus Adrianus Dillen ,  Fan Feng ,  Ronald Van Ittersum ,  Willem Louis Van Mierlo ,  Koen Thuijs

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70525

Abstract: A method and associated apparatuses for controlling a process of manufacturing semiconductor devices on a substrate. The method includes obtaining process data relating to the process and determining a correction for the process based on the process data and a first control objective associated with the devices on the substrate. A first probability of the first control objective being achievable is determined and the correction adjusted based on the probability and at least a second control objective having a second probability of being achievable compared to the first control objective.

公开(公告)号：US20200211819A1

公开(公告)日：2020-07-02

申请号：US16730848

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus DILLEN ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.