公开(公告)号：US20160085905A1

公开(公告)日：2016-03-24

申请号：US14861847

申请日：2015-09-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Gang CHEN ,  Joseph Werner DE VOCHT ,  Yuelin DU ,  Wanyu LI ,  Yen-Wen LU

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70666

Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method comprising: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

Abstract translation: 本文公开了一种计算机实现的方法，用于确定用于将部分成像到衬底上的器件制造工艺的设计布局的一部分上的感兴趣区域的重叠处理窗口（OPW），该方法包括：获得多个 特征在感兴趣的领域; 获得装置制造过程的一个或多个处理参数的多个值; 通过在多个值中的每一个值下的设备制造过程来确定存在缺陷，存在缺陷的概率或二者成像多个特征; 从缺陷的存在，存在缺陷的概率或两者确定感兴趣区域的OPW。

公开(公告)号：US20180089359A1

公开(公告)日：2018-03-29

申请号：US15821051

申请日：2017-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Gang CHEN ,  Joseph Werner DE VOCHT ,  Yuelin DU ,  Wanyu LI ,  Yen-Wen LU

IPC: G06F17/50 ,  G03F7/20

Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.