公开(公告)号：US20240004308A1

公开(公告)日：2024-01-04

申请号：US18021905

申请日：2021-08-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Ali ALSAQQA ,  Aabid PATEL ,  Patrick Sebastian UEBEL ,  Amir ABDOLVAND ,  Paulus Antonius Andreas TEUNISSEN ,  Wisham F. KADHIM

IPC: G03F7/00 ,  G02F1/35

CPC classification number: G03F7/70625 ,  G02F1/3523 ,  G03F7/70041 ,  G03F7/70558

Abstract: A radiation source arrangement including: a radiation source operable to generate source radiation including source energy pulses; and at least one non-linear energy-filter operable to filter the source radiation to obtain filtered radiation including filtered energy pulses. The at least one non-linear energy-filter is operable to mitigate variation in energy in the filtered radiation by reducing the energy level of the source energy pulses which have an energy level corresponding to one of both extremities of an energy distribution of the source energy pulses by a greater amount than the source energy pulses which have an energy level corresponding to a peak of the energy distribution.

公开(公告)号：US20250060680A1

公开(公告)日：2025-02-20

申请号：US18721405

申请日：2022-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Aabid PATEL ,  Joshua ADAMS ,  Lisa DIXON ,  Igor Matheus Petronella AARTS

IPC: G03F7/00 ,  G01B11/27

Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.