公开(公告)号：US10657999B2

公开(公告)日：2020-05-19

申请号：US15319149

申请日：2014-06-20

申请人： Advanced Material Technologies, Inc.

发明人： Kouji Abe ,  Toshiyuki Watanabe ,  Masafumi Tanaka ,  Kohei Okudaira ,  Hiroyasu Sekino ,  Yuuji Honda

IPC分类号： G11B5/85 ,  C23C16/503 ,  G11B5/84 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  G11B5/72

摘要： A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.