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公开(公告)号:US20190393123A1
公开(公告)日:2019-12-26
申请号:US16563077
申请日:2019-09-06
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Patrick J. Shyvers , Milind S. Bhagavat , Kaushik Mysore , Brett P. Wilkerson
IPC: H01L23/367 , H01L25/00 , H01L25/065
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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公开(公告)号:US11164807B2
公开(公告)日:2021-11-02
申请号:US16563077
申请日:2019-09-06
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Patrick J. Shyvers , Milind S. Bhagavat , Kaushik Mysore , Brett P. Wilkerson
IPC: H01L23/367 , H01L25/00 , H01L25/065 , H01L23/36 , H01L23/373
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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公开(公告)号:US11189540B2
公开(公告)日:2021-11-30
申请号:US16563138
申请日:2019-09-06
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Patrick J. Shyvers , Milind S. Bhagavat , Kaushik Mysore , Brett P. Wilkerson
IPC: H01L23/367 , H01L25/00 , H01L25/065 , H01L23/36 , H01L23/373
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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公开(公告)号:US20190393124A1
公开(公告)日:2019-12-26
申请号:US16563138
申请日:2019-09-06
Applicant: Advanced Micro Devices, Inc.
Inventor: John Wuu , Samuel Naffziger , Patrick J. Shyvers , Milind S. Bhagavat , Kaushik Mysore , Brett P. Wilkerson
IPC: H01L23/367 , H01L25/00 , H01L25/065
Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.
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