公开(公告)号：US11587881B2

公开(公告)日：2023-02-21

申请号：US16813369

申请日：2020-03-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Fan Chen ,  Yu-Ju Liao ,  Chu-Jie Yang ,  Sheng-Hung Shih

IPC: H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L25/065

Abstract: A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.